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SiC-MOSFETs SIC_DISCRETE
- AIMW120R045M1XKSA1
- Infineon Technologies
-
1:
CHF 18.02
-
824Auf Lager
-
NRND
|
Mouser-Teilenr.
726-AIMW120R045M1XKS
NRND
|
Infineon Technologies
|
SiC-MOSFETs SIC_DISCRETE
|
|
824Auf Lager
|
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CHF 18.02
|
|
|
CHF 12.88
|
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CHF 12.87
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Min.: 1
Mult.: 1
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Through Hole
|
TO-247-3
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N-Channel
|
1 Channel
|
1.2 kV
|
52 A
|
59 mOhms
|
- 7 V, + 20 V
|
5.7 V
|
57 nC
|
- 55 C
|
+ 175 C
|
228 W
|
Enhancement
|
CoolSiC
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|
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SiC-MOSFETs CoolSiC 1200V SiC Trench MOSFET in TO247-4 package
- IMZ120R030M1HXKSA1
- Infineon Technologies
-
1:
CHF 13.42
-
228Auf Lager
-
720Auf Bestellung
|
Mouser-Teilenr.
726-IMZ120R030M1HXKS
|
Infineon Technologies
|
SiC-MOSFETs CoolSiC 1200V SiC Trench MOSFET in TO247-4 package
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228Auf Lager
720Auf Bestellung
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|
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CHF 13.42
|
|
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CHF 8.27
|
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CHF 7.62
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Min.: 1
Mult.: 1
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Through Hole
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TO-247-4
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N-Channel
|
1 Channel
|
1.2 kV
|
56 A
|
40 mOhms
|
- 7 V, + 23 V
|
5.7 V
|
63 nC
|
- 55 C
|
+ 150 C
|
227 W
|
Enhancement
|
CoolSiC
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SiC-MOSFETs SILICON CARBIDE MOSFET
- IMW65R027M1HXKSA1
- Infineon Technologies
-
1:
CHF 11.47
-
1’300Auf Lager
-
NRND
|
Mouser-Teilenr.
726-IMW65R027M1HXKSA
NRND
|
Infineon Technologies
|
SiC-MOSFETs SILICON CARBIDE MOSFET
|
|
1’300Auf Lager
|
|
|
CHF 11.47
|
|
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CHF 6.97
|
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CHF 6.22
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Min.: 1
Mult.: 1
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|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
650 V
|
47 A
|
34 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
62 nC
|
- 55 C
|
+ 150 C
|
189 W
|
Enhancement
|
CoolSiC
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SiC-MOSFETs CoolSiC 1200V SiC Trench MOSFET in TO247-3 package
- IMW120R140M1HXKSA1
- Infineon Technologies
-
1:
CHF 6.03
-
375Auf Lager
|
Mouser-Teilenr.
726-IMW120R140M1HXKS
|
Infineon Technologies
|
SiC-MOSFETs CoolSiC 1200V SiC Trench MOSFET in TO247-3 package
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|
375Auf Lager
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CHF 6.03
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CHF 3.71
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CHF 3.11
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CHF 2.89
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Min.: 1
Mult.: 1
|
|
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Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
1.2 kV
|
19 A
|
182 mOhms
|
- 7 V, + 23 V
|
3.5 V
|
13 nC
|
- 55 C
|
+ 175 C
|
94 W
|
Enhancement
|
CoolSiC
|
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SiC-MOSFETs SILICON CARBIDE MOSFET
- IMZA65R048M1HXKSA1
- Infineon Technologies
-
1:
CHF 8.13
-
113Auf Lager
-
240erwartet ab 31.12.2026
-
NRND
|
Mouser-Teilenr.
726-IMZA65R048M1HXKS
NRND
|
Infineon Technologies
|
SiC-MOSFETs SILICON CARBIDE MOSFET
|
|
113Auf Lager
240erwartet ab 31.12.2026
|
|
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CHF 8.13
|
|
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CHF 5.29
|
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CHF 4.22
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CHF 3.96
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Min.: 1
Mult.: 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
650 V
|
39 A
|
64 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
33 nC
|
- 55 C
|
+ 150 C
|
125 W
|
Enhancement
|
CoolSiC
|
|
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SiC-MOSFETs CoolSiC 1700 V SiC Trench MOSFET in TO-263-7 package
- IMBF170R1K0M1XTMA1
- Infineon Technologies
-
1:
CHF 4.32
-
11’000erwartet ab 10.06.2027
|
Mouser-Teilenr.
726-IMBF170R1K0M1XTM
|
Infineon Technologies
|
SiC-MOSFETs CoolSiC 1700 V SiC Trench MOSFET in TO-263-7 package
|
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11’000erwartet ab 10.06.2027
|
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CHF 4.32
|
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CHF 2.81
|
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CHF 2.07
|
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CHF 1.82
|
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CHF 1.66
|
|
Min.: 1
Mult.: 1
:
1’000
|
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SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.7 kV
|
5.2 A
|
1 Ohms
|
- 10 V, + 20 V
|
4.5 V
|
5 nC
|
- 55 C
|
+ 175 C
|
68 W
|
Enhancement
|
CoolSiC
|
|
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SiC-MOSFETs SILICON CARBIDE MOSFET
- IMZA65R072M1HXKSA1
- Infineon Technologies
-
1:
CHF 6.72
-
Nicht-auf-Lager-Vorlaufzeit 52 Wochen
-
NRND
|
Mouser-Teilenr.
726-IMZA65R072M1HXKS
NRND
|
Infineon Technologies
|
SiC-MOSFETs SILICON CARBIDE MOSFET
|
|
Nicht-auf-Lager-Vorlaufzeit 52 Wochen
|
|
|
CHF 6.72
|
|
|
CHF 3.90
|
|
|
CHF 3.60
|
|
|
CHF 3.09
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
650 V
|
28 A
|
94 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
22 nC
|
- 55 C
|
+ 150 C
|
96 W
|
Enhancement
|
CoolSiC
|
|
Liechtenstein