|
|
SiC-MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R008M2HXTMA1
- Infineon Technologies
-
1:
CHF 28.60
-
1’073Auf Lager
-
1’000erwartet ab 15.10.2026
|
Mouser-Teilenr.
726-IMBG120R008M2HXT
|
Infineon Technologies
|
SiC-MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
1’073Auf Lager
1’000erwartet ab 15.10.2026
|
|
|
CHF 28.60
|
|
|
CHF 21.47
|
|
|
CHF 21.47
|
|
Min.: 1
Mult.: 1
Max.: 10
:
1’000
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
189 A
|
7.7 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
195 nC
|
- 55 C
|
+ 175 C
|
800 W
|
Enhancement
|
|
|
|
SiC-MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R017M2HXTMA1
- Infineon Technologies
-
1:
CHF 15.26
-
3’317Auf Lager
|
Mouser-Teilenr.
726-IMBG120R017M2HXT
|
Infineon Technologies
|
SiC-MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
3’317Auf Lager
|
|
|
CHF 15.26
|
|
|
CHF 10.87
|
|
|
CHF 9.69
|
|
|
CHF 9.57
|
|
|
CHF 9.05
|
|
Min.: 1
Mult.: 1
:
1’000
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
107 A
|
17.1 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
89 nC
|
- 55 C
|
+ 175 C
|
470 W
|
Enhancement
|
|
|
|
SiC-MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R012M2HXTMA1
- Infineon Technologies
-
1:
CHF 20.64
-
710Auf Lager
|
Mouser-Teilenr.
726-IMBG120R012M2HXT
|
Infineon Technologies
|
SiC-MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
710Auf Lager
|
|
|
CHF 20.64
|
|
|
CHF 14.97
|
|
|
CHF 14.24
|
|
|
CHF 13.93
|
|
|
CHF 13.18
|
|
Min.: 1
Mult.: 1
:
1’000
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
144 A
|
12.2 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
124 nC
|
- 55 C
|
+ 175 C
|
600 W
|
Enhancement
|
|
|
|
SiC-MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R022M2HXTMA1
- Infineon Technologies
-
1:
CHF 12.83
-
386Auf Lager
|
Mouser-Teilenr.
726-IMBG120R022M2HXT
|
Infineon Technologies
|
SiC-MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
386Auf Lager
|
|
|
CHF 12.83
|
|
|
CHF 9.04
|
|
|
CHF 7.75
|
|
|
CHF 7.34
|
|
Min.: 1
Mult.: 1
:
1’000
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
87 A
|
21.6 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
71 nC
|
- 55 C
|
+ 175 C
|
385 W
|
Enhancement
|
|
|
|
SiC-MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R026M2HXTMA1
- Infineon Technologies
-
1:
CHF 11.00
-
1’673Auf Lager
|
Mouser-Teilenr.
726-IMBG120R026M2HXT
|
Infineon Technologies
|
SiC-MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
1’673Auf Lager
|
|
|
CHF 11.00
|
|
|
CHF 7.69
|
|
|
CHF 7.69
|
|
Min.: 1
Mult.: 1
Max.: 60
:
1’000
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
75 A
|
25.4 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
60 nC
|
- 55 C
|
+ 175 C
|
335 W
|
Enhancement
|
|
|
|
SiC-MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R040M2HXTMA1
- Infineon Technologies
-
1:
CHF 8.58
-
316Auf Lager
|
Mouser-Teilenr.
726-IMBG120R040M2HXT
|
Infineon Technologies
|
SiC-MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
316Auf Lager
|
|
|
CHF 8.58
|
|
|
CHF 5.92
|
|
|
CHF 4.60
|
|
|
CHF 4.35
|
|
Min.: 1
Mult.: 1
:
1’000
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
52 A
|
39.6 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
8.1 nC
|
- 55 C
|
+ 175 C
|
250 W
|
Enhancement
|
|
|
|
SiC-MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R078M2HXTMA1
- Infineon Technologies
-
1:
CHF 6.23
-
841Auf Lager
|
Mouser-Teilenr.
726-IMBG120R078M2HXT
|
Infineon Technologies
|
SiC-MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
841Auf Lager
|
|
|
CHF 6.23
|
|
|
CHF 4.22
|
|
|
CHF 3.09
|
|
|
CHF 3.01
|
|
|
CHF 2.85
|
|
Min.: 1
Mult.: 1
:
1’000
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
29 A
|
78.1 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
20.6 nC
|
- 55 C
|
+ 175 C
|
158 W
|
Enhancement
|
|
|
|
SiC-MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R116M2HXTMA1
- Infineon Technologies
-
1:
CHF 5.37
-
649Auf Lager
|
Mouser-Teilenr.
726-IMBG120R116M2HXT
|
Infineon Technologies
|
SiC-MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
649Auf Lager
|
|
|
CHF 5.37
|
|
|
CHF 3.47
|
|
|
CHF 2.61
|
|
|
CHF 2.46
|
|
|
CHF 2.33
|
|
Min.: 1
Mult.: 1
:
1’000
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
21.2 A
|
115.7 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
14.4 nC
|
- 55 C
|
+ 175 C
|
123 W
|
Enhancement
|
|
|
|
SiC-MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R181M2HXTMA1
- Infineon Technologies
-
1:
CHF 4.58
-
1’802Auf Lager
|
Mouser-Teilenr.
726-IMBG120R181M2HXT
|
Infineon Technologies
|
SiC-MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
1’802Auf Lager
|
|
|
CHF 4.58
|
|
|
CHF 3.06
|
|
|
CHF 2.19
|
|
|
CHF 2.00
|
|
|
CHF 1.89
|
|
Min.: 1
Mult.: 1
:
1’000
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
14.9 A
|
181.4 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
9.7 nC
|
- 55 C
|
+ 175 C
|
94 W
|
Enhancement
|
|
|
|
SiC-MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R234M2HXTMA1
- Infineon Technologies
-
1:
CHF 4.14
-
6’769Auf Lager
|
Mouser-Teilenr.
726-IMBG120R234M2HXT
|
Infineon Technologies
|
SiC-MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
6’769Auf Lager
|
|
|
CHF 4.14
|
|
|
CHF 2.75
|
|
|
CHF 1.95
|
|
|
CHF 1.74
|
|
|
CHF 1.73
|
|
|
CHF 1.64
|
|
Min.: 1
Mult.: 1
:
1’000
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
8.1 A
|
233.9 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
7.9 nC
|
- 55 C
|
+ 175 C
|
80 W
|
Enhancement
|
|
|
|
SiC-MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R053M2HXTMA1
- Infineon Technologies
-
1:
CHF 7.15
-
1’968erwartet ab 09.07.2026
|
Mouser-Teilenr.
726-IMBG120R053M2HXT
|
Infineon Technologies
|
SiC-MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
1’968erwartet ab 09.07.2026
|
|
|
CHF 7.15
|
|
|
CHF 4.89
|
|
|
CHF 3.61
|
|
|
CHF 3.42
|
|
Min.: 1
Mult.: 1
:
1’000
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
41 A
|
52.6 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
30 nC
|
- 55 C
|
+ 175 C
|
205 W
|
Enhancement
|
|
Liechtenstein