RGW 650-V-Field-Stop-Trench-IGBTs

Die RGW 650-V-Field-Stop-Trench-IGBTs von ROHM Semiconductor bieten eine niedrige Kollektor-Emitter-Sättigungsspannung in einem kleinen Gehäuse. Die RGW-IGBTs zeichnen sich durch hohe Schaltgeschwindigkeiten, niedrige Schaltverluste und eine eingebaute, sehr schnelle und weiche Rückspeisung FRD aus. Die ROHM RGW 650-V-Field-Stop-Trench-IGBTs sind ideal für Solar-Wechselrichter, USV, Schweiß-, IH- und PFC-Anwendungen.

Ergebnisse: 42
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Menge RoHS ECAD Model Technologie
Verpackung/Gehäuse
Montageart
Konfiguration
Kollektor-Emitterspannung VCEO max.
Sättigungsspannung Kollektor-Emitter
Maximale Gate-Emitter-Spannung
Kollektorgleichstrom bei 25 C
Pd - Verlustleistung
Minimale Betriebstemperatur
Maximale Betriebstemperatur
Verpackung
ROHM Semiconductor IGBTs TO247 650V 50A TRNCH
Datenblatt
830Auf Lager
Min.: 1
Mult.: 1

Si TO-247GE-3 Through Hole Single 650 V 2.1 V 30 V 85 A 277 W - 40 C + 175 C Tube
ROHM Semiconductor IGBTs 650V 30A TO-3PFM Field Stp Trnch IGBT
Datenblatt
448Auf Lager
Min.: 1
Mult.: 1

Si TO-3PFM-3 Through Hole Single 650 V 1.9 V 30 V 33 A 72 W - 40 C + 175 C Tube
ROHM Semiconductor IGBTs 650V 40A TO-3PFM Field Stp Trnch IGBT
Datenblatt
449Auf Lager
Min.: 1
Mult.: 1

Si TO-3PFM-3 Through Hole Single 650 V 1.9 V 30 V 39 A 81 W - 40 C + 175 C Tube
ROHM Semiconductor IGBTs 650V 40A TO-3PFM Field Stp Trnch IGBT
Datenblatt
358Auf Lager
Min.: 1
Mult.: 1

Si TO-3PFM-3 Through Hole Single 650 V 1.9 V 30 V 39 A 81 W - 40 C + 175 C Tube
ROHM Semiconductor IGBTs High-Speed Fast Switching Type, 650V 40A, FRD Built-in, TO-3PFM, Field Stop Trench IGBT
Datenblatt
840Auf Lager
Min.: 1
Mult.: 1

Si TO-3PFM-3 Through Hole Single 650 V 1.9 V 30 V 39 A 81 W - 40 C + 175 C Tube
ROHM Semiconductor IGBTs High-Speed Fast Switching Type, 650V 18A, TO-3PFM, Field Stop Trench IGBT
Datenblatt
440Auf Lager
Min.: 1
Mult.: 1

Si TO-3PFM-3 Through Hole Single 650 V 1.9 V 30 V 30 A 67 W - 40 C + 175 C Tube
ROHM Semiconductor IGBTs 650V 30A TO-3PFM Field Stp Trnch IGBT
Datenblatt
446Auf Lager
Min.: 1
Mult.: 1

Si TO-3PFM-3 Through Hole Single 650 V 1.9 V 30 V 33 A 72 W - 40 C + 175 C Tube
ROHM Semiconductor IGBTs High-Speed Fast Switching Type, 650V 20A, FRD Built-in, LPDL, Field Stop Trench IGBT for Automotive: RGW40NL65DHRB is a IGBT with low collector - emitter saturation voltage, suitable for On & Off Board Chagers, DC-DC Converters, PFC, Industrial Inver
Datenblatt
2’000Auf Lager
Min.: 1
Mult.: 1
: 1’000

Si TO-263-3 SMD/SMT Single 650 V 1.9 V 30 V 48 A 144 W - 40 C + 175 C Reel, Cut Tape
ROHM Semiconductor IGBTs High-Speed Fast Switching Type, 650V 20A, LPDL, Field Stop Trench IGBT for Automotive: RGW40NL65HRB is a IGBT with low collector - emitter saturation voltage, suitable for On & Off Board Chagers, DC-DC Converters, PFC, Industrial Inverter. This produ
Datenblatt
1’990Auf Lager
Min.: 1
Mult.: 1
: 1’000

Si TO-263-3 SMD/SMT Single 650 V 1.9 V 30 V 48 A 144 W - 40 C + 175 C Reel, Cut Tape
ROHM Semiconductor IGBTs High-Speed Fast Switching Type, 650V 25A, FRD Built-in, LPDL, Field Stop Trench IGBT for Automotive: RGW50NL65DHRB is a IGBT with low collector - emitter saturation voltage, suitable for On & Off Board Chagers, DC-DC Converters, PFC, Industrial Inver
Datenblatt
2’000Auf Lager
Min.: 1
Mult.: 1
: 1’000

Si TO-263-3 SMD/SMT Single 650 V 1.9 V 30 V 57 A 165 W - 40 C + 175 C Reel, Cut Tape
ROHM Semiconductor IGBTs High-Speed Fast Switching Type, 650V 25A, LPDL, Field Stop Trench IGBT for Automotive: RGW50NL65HRB is a IGBT with low collector - emitter saturation voltage, suitable for On & Off Board Chagers, DC-DC Converters, PFC, Industrial Inverter. This produ
Datenblatt
2’000Auf Lager
Min.: 1
Mult.: 1
: 1’000

Si TO-263-3 SMD/SMT Single 650 V 1.9 V 30 V 57 A 165 W - 40 C + 175 C Reel, Cut Tape
ROHM Semiconductor IGBTs High-Speed Fast Switching Type, 650V 30A, FRD Built-in, LPDL, Field Stop Trench IGBT for Automotive: RGW60NL65DHRB is a IGBT with low collector - emitter saturation voltage, suitable for On & Off Board Chagers, DC-DC Converters, PFC, Industrial Inver
Datenblatt
1’500Auf Lager
Min.: 1
Mult.: 1
: 1’000

Si TO-263-3 SMD/SMT Single 650 V 1.9 V 30 V 67 A 187 W - 40 C + 175 C Reel, Cut Tape
ROHM Semiconductor IGBTs High-Speed Fast Switching Type, 650V 30A, LPDL, Field Stop Trench IGBT for Automotive: RGW60NL65HRB is a IGBT with low collector - emitter saturation voltage, suitable for On & Off Board Chagers, DC-DC Converters, PFC, Industrial Inverter. This produ
Datenblatt
1’990Auf Lager
Min.: 1
Mult.: 1
: 1’000

Si TO-263-3 SMD/SMT Single 650 V 1.9 V 30 V 67 A 187 W - 40 C + 175 C Reel, Cut Tape
ROHM Semiconductor IGBTs High-Speed Fast Switching Type, 650V 40A, FRD Built-in, LPDL, Field Stop Trench IGBT for Automotive: RGW80NL65DHRB is a IGBT with low collector - emitter saturation voltage, suitable for On & Off Board Chagers, DC-DC Converters, PFC, Industrial Inver
Datenblatt
1’648Auf Lager
Min.: 1
Mult.: 1
: 1’000

Si TO-263-3 SMD/SMT Single 650 V 1.9 V 30 V 83 A 227 W - 40 C + 175 C Reel, Cut Tape
ROHM Semiconductor IGBTs High-Speed Fast Switching Type, 650V 40A, LPDL, Field Stop Trench IGBT for Automotive: RGW80NL65HRB is a IGBT with low collector - emitter saturation voltage, suitable for On & Off Board Chagers, DC-DC Converters, PFC, Industrial Inverter. This produ
Datenblatt
1’979Auf Lager
Min.: 1
Mult.: 1
: 1’000

Si TO-263-3 SMD/SMT Single 650 V 1.9 V 30 V 83 A 227 W - 40 C + 175 C Reel, Cut Tape
ROHM Semiconductor IGBTs TO247 650V 30A TRNCH
Datenblatt
1’013Auf Lager
Min.: 1
Mult.: 1

Si TO-247GE-3 Through Hole Single 650 V 2.1 V 30 V 58 A 194 W - 40 C + 175 C Tube
ROHM Semiconductor IGBTs TO247 650V 30A TRNCH
Datenblatt
1’153Auf Lager
Min.: 1
Mult.: 1

Si TO-247GE-3 Through Hole Single 650 V 2.1 V 30 V 58 A 194 W - 40 C + 175 C Tube
ROHM Semiconductor IGBTs TO3P 650V 16A TRNCH
Datenblatt
895Auf Lager
Min.: 1
Mult.: 1

Si TO-3PFM-3 Through Hole Single 650 V 1.9 V 30 V 27 A 61 W - 40 C + 175 C Tube
ROHM Semiconductor IGBTs High-Speed Fast Switching Type, 650V 18A, FRD Built-in, TO-3PFM, Field Stop Trench IGBT
Datenblatt
448Auf Lager
Min.: 1
Mult.: 1

Si TO-3PFM-3 Through Hole Single 650 V 1.9 V 30 V 30 A 67 W - 40 C + 175 C Tube
ROHM Semiconductor IGBTs Transistor, IGBT, 650V 40A, FRD Built-in, TO-247N, Field Stop Trench IGBT
Datenblatt
Produkt-Kommentare
450Auf Lager
Min.: 1
Mult.: 1

Si TO-247N-3 Through Hole Single 650 V 1.9 V 30 V 80 A 214 W - 40 C + 175 C Tube
ROHM Semiconductor IGBTs TO247 650V 30A TRNCH
Datenblatt
2’394Auf Lager
Min.: 1
Mult.: 1

Si TO-247GE-3 Through Hole Single 650 V 2 V 30 V 51 A 156 W - 40 C + 175 C Tube
ROHM Semiconductor IGBTs TO247 650V 30A TRNCH
Datenblatt
2’394Auf Lager
Min.: 1
Mult.: 1

Si TO-247GE-3 Through Hole Single 650 V 2 V 30 V 51 A 156 W - 40 C + 175 C Tube
ROHM Semiconductor IGBTs TO247 650V 40A TRNCH
Datenblatt
2’388Auf Lager
Min.: 1
Mult.: 1

Si TO-247GE-3 Through Hole Single 650 V 2 V 30 V 71 A 202 W - 40 C + 175 C Tube
ROHM Semiconductor IGBTs TO247 650V 60A TRNCH
Datenblatt
2’387Auf Lager
Min.: 1
Mult.: 1

Si TO-247GE-3 Through Hole Single 650 V 2 V 30 V 104 A 288 W - 40 C + 175 C Tube
ROHM Semiconductor IGBTs High-Speed Fast Switching Type, 650V 75A, FRD Built-in, TO-247N, Field Stop Trench IGBT
Datenblatt
Produkt-Kommentare
400Auf Lager
Min.: 1
Mult.: 1

Si TO-247N-3 Through Hole Single 650 V 1.9 V 30 V 132 A 348 W - 40 C + 175 C Tube