UJ3D 650V/1200V/1700V SiC Schottky Diodes

onsemi UJ3D 650V/1200V/1700V SiC Schottky Diodes are designed to take advantage of SiC's superior physical characteristics over standard silicon, with 4 times better dynamic characteristics and 15% less forward voltage (VF). With zero reverse recovery charge and a high maximum junction temperature of +175°C, these devices are ideally suited for high-frequency and high-efficiency power systems with minimum cooling requirements. These devices from onsemi feature an optimized forward voltage drop, enhanced surge capability, and ultra-low reverse recovery Qc(Qrr) and are ideally suited for telecom power, server PSUs, battery chargers, and any application that requires high switching speeds and reduced losses. All devices are qualified according to AEC-Q101 standards and manufactured in a TS 16949-certified supply chain, making them ideal for automotive applications. 

Ergebnisse: 10
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Beschreibung Datenblatt Verfügbarkeit Preis (CHF) Ergebnisse in der Tabelle nach dem Einheitspreis bei Ihrer Menge filtern.
Menge RoHS ECAD Model Montageart
Verpackung/Gehäuse
Konfiguration
If - Durchlassstrom
Vrrm - Periodische Sperrspannung
Vf - Durchlassspannung
Ifsm - Durchlass-Stoßstrom
Ir - Sperrstrom
Minimale Betriebstemperatur
Maximale Betriebstemperatur
Vr - Sperrspannung
Serie
Qualifikation
Verpackung
onsemi SiC Schottky Dioden 1200V/50ASICDIODEG3TO
Datenblatt
1’307Auf Lager
Min.: 1
Mult.: 1

Through Hole TO-247-2 Single 50 A 1.2 kV 1.5 V 275 A 52 uA - 55 C + 175 C 1.2 kV UJ3D AEC-Q101 Tube
onsemi SiC Schottky Dioden 1200V/20ASICDIODEDUAL
Datenblatt
343Auf Lager
Min.: 1
Mult.: 1

Through Hole TO-247-3 Dual 20 A 1.2 kV 1.4 V 240 A 200 uA - 55 C + 175 C 1.2 kV UJ3D AEC-Q101 Tube
onsemi SiC Schottky Dioden 1200V/50ASICDIODEG3TO
Datenblatt
538Auf Lager
Min.: 1
Mult.: 1

Through Hole TO-247-3 Single 50 A 1.2 kV 1.5 V 275 A 500 uA - 55 C + 175 C 1.2 kV UJ3D AEC-Q101 Tube
onsemi SiC Schottky Dioden 1200V/20ASICDIODEG3TO
Datenblatt
917Auf Lager
Min.: 1
Mult.: 1

Through Hole TO-247-2 Single 20 A 1.2 kV 1.52 V 190 A 18 uA - 55 C + 175 C 1.2 kV UJ3D AEC-Q101 Tube
onsemi SiC Schottky Dioden 1200V/10ASICDIODEG3TO
Datenblatt
688Auf Lager
Min.: 1
Mult.: 1

Through Hole TO-247-2 Single 10 A 1.2 kV 1.4 V 120 A 10 uA - 55 C + 175 C 1.2 kV UJ3D AEC-Q101 Tube
onsemi SiC Schottky Dioden 1200V/10ASICDIODEG3TO
Datenblatt
1’039Auf Lager
Min.: 1
Mult.: 1

Through Hole TO-247-3 Single 10 A 1.2 kV 1.4 V 120 A 100 uA - 55 C + 175 C 1.2 kV UJ3D AEC-Q101 Tube
onsemi SiC Schottky Dioden 1200V/10ASICDIODEDUAL
Datenblatt
1’070Auf Lager
Min.: 1
Mult.: 1

Through Hole TO-247-3 Dual 10 A 1.2 kV 1.4 V 140 A 80 uA - 55 C + 175 C 1.2 kV UJ3D AEC-Q101 Tube
onsemi SiC Schottky Dioden 1700V/25ASICDIODEG3TO
Datenblatt
236Auf Lager
Min.: 1
Mult.: 1

Through Hole TO-247-2 Single 25 A 1.7 kV 1.54 V 180 A 24 uA - 55 C + 175 C 1.7 kV UJ3D AEC-Q101 Tube
onsemi SiC Schottky Dioden 650V/60ASICDIODEDUALG
Datenblatt
140Auf Lager
600erwartet ab 20.11.2026
Min.: 1
Mult.: 1
Max.: 50

Through Hole TO-247-3 Dual 60 A 650 V 1.5 V 330 A 60 uA - 55 C + 175 C 650 V UJ3D AEC-Q101 Tube
onsemi SiC Schottky Dioden 650V/20ASICDIODEDUALG
Datenblatt
139Auf Lager
Min.: 1
Mult.: 1

Through Hole TO-247-3 Dual 20 A 650 V 1.5 V 140 A 20 uA - 55 C + 175 C 650 V UJ3D AEC-Q101 Tube