|
|
MOSFETs N-channel 600 V, 32 mOhm typ., 72 A MDmesh DM6 Power MOSFET in a TO-247 long lea
- STWA75N60DM6
- STMicroelectronics
-
1:
CHF 8.31
-
185Auf Lager
|
Mouser-Teilenr.
511-STWA75N60DM6
|
STMicroelectronics
|
MOSFETs N-channel 600 V, 32 mOhm typ., 72 A MDmesh DM6 Power MOSFET in a TO-247 long lea
|
|
185Auf Lager
|
|
|
CHF 8.31
|
|
|
CHF 6.51
|
|
|
CHF 5.42
|
|
|
CHF 5.41
|
|
|
CHF 4.51
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
|
|
|
MOSFETs N-channel 620 V 8.4 A TO-220 TO-22
- STF10N62K3
- STMicroelectronics
-
1:
CHF 2.19
-
976Auf Lager
|
Mouser-Teilenr.
511-STF10N62K3
|
STMicroelectronics
|
MOSFETs N-channel 620 V 8.4 A TO-220 TO-22
|
|
976Auf Lager
|
|
|
CHF 2.19
|
|
|
CHF 1.41
|
|
|
CHF 0.951
|
|
|
CHF 0.796
|
|
|
CHF 0.69
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
|
|
|
MOSFETs N-channel 600 V, 0.35 Ohm typ 11 A MDmesh M2 Power MOSFET in TO-220FP wide creep
- STFH13N60M2
- STMicroelectronics
-
1:
CHF 2.55
-
970Auf Lager
-
Status beim Hersteller bestätigen
|
Mouser-Teilenr.
511-STFH13N60M2
Status beim Hersteller bestätigen
|
STMicroelectronics
|
MOSFETs N-channel 600 V, 0.35 Ohm typ 11 A MDmesh M2 Power MOSFET in TO-220FP wide creep
|
|
970Auf Lager
|
|
|
CHF 2.55
|
|
|
CHF 1.30
|
|
|
CHF 1.10
|
|
|
CHF 1.06
|
|
|
CHF 0.907
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
|
|
|
IGBT-Module SLLIMM nano 2nd series IPM, 3-phase inverter, 5 A, 600 V, short-circuit rugged I
- STGIPQ5C60T-HLS
- STMicroelectronics
-
1:
CHF 7.14
-
258Auf Lager
|
Mouser-Teilenr.
511-STGIPQ5C60T-HLS
|
STMicroelectronics
|
IGBT-Module SLLIMM nano 2nd series IPM, 3-phase inverter, 5 A, 600 V, short-circuit rugged I
|
|
258Auf Lager
|
|
|
CHF 7.14
|
|
|
CHF 5.19
|
|
|
CHF 3.74
|
|
|
CHF 3.61
|
|
Min.: 1
Mult.: 1
|
|
IGBT Modules
|
Si
|
|
|
|
|
|
|
MOSFETs N-channel 600 V, 85 mOhm typ., 30 A MDmesh M6 Power MOSFET
- STO36N60M6
- STMicroelectronics
-
1:
CHF 4.89
-
504Auf Lager
|
Mouser-Teilenr.
511-STO36N60M6
|
STMicroelectronics
|
MOSFETs N-channel 600 V, 85 mOhm typ., 30 A MDmesh M6 Power MOSFET
|
|
504Auf Lager
|
|
|
CHF 4.89
|
|
|
CHF 3.28
|
|
|
CHF 2.36
|
|
|
CHF 2.19
|
|
|
CHF 2.19
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
SMD/SMT
|
TO-LL-8
|
N-Channel
|
|
|
|
MOSFETs N-channel 600 V, 0.094 Ohm typ., 28 A MDmesh DM2 Power MOSFETs in TO-247 package
- STW35N60DM2
- STMicroelectronics
-
1:
CHF 4.11
-
382Auf Lager
|
Mouser-Teilenr.
511-STW35N60DM2
|
STMicroelectronics
|
MOSFETs N-channel 600 V, 0.094 Ohm typ., 28 A MDmesh DM2 Power MOSFETs in TO-247 package
|
|
382Auf Lager
|
|
|
CHF 4.11
|
|
|
CHF 2.75
|
|
|
CHF 2.25
|
|
|
CHF 1.92
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
|
|
|
MOSFETs PTD HIGH VOLTAGE
- STB6N65K3
- STMicroelectronics
-
1:
CHF 1.65
-
1’992Auf Lager
-
Status beim Hersteller bestätigen
|
Mouser-Teilenr.
511-STB6N65K3
Status beim Hersteller bestätigen
|
STMicroelectronics
|
MOSFETs PTD HIGH VOLTAGE
|
|
1’992Auf Lager
|
|
|
CHF 1.65
|
|
|
CHF 1.06
|
|
|
CHF 0.731
|
|
|
CHF 0.619
|
|
|
Anzeigen
|
|
|
CHF 0.517
|
|
|
CHF 0.493
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
|
|
|
MOSFETs N-channel 800 V, 300 mOhm typ., 14 A MDmesh K5 Power MOSFET in TO-220FP ultra na
- STFU15N80K5
- STMicroelectronics
-
1:
CHF 3.06
-
704Auf Lager
|
Mouser-Teilenr.
511-STFU15N80K5
|
STMicroelectronics
|
MOSFETs N-channel 800 V, 300 mOhm typ., 14 A MDmesh K5 Power MOSFET in TO-220FP ultra na
|
|
704Auf Lager
|
|
|
CHF 3.06
|
|
|
CHF 2.01
|
|
|
CHF 1.80
|
|
|
CHF 1.60
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
|
|
|
MOSFETs N-Ch 650 Volt 6.4Amp Zener SuperMESH
- STP9NK65Z
- STMicroelectronics
-
1:
CHF 3.16
-
914Auf Lager
|
Mouser-Teilenr.
511-STP9NK65Z
|
STMicroelectronics
|
MOSFETs N-Ch 650 Volt 6.4Amp Zener SuperMESH
|
|
914Auf Lager
|
|
|
CHF 3.16
|
|
|
CHF 2.06
|
|
|
CHF 1.53
|
|
|
CHF 1.36
|
|
|
CHF 1.20
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
|
|
|
Bipolartransistoren - BJT Rad-Hard 50 V, 0.8 A NPN transistor - Engineering model
- 2N2222AUB1
- STMicroelectronics
-
1:
CHF 75.00
-
145Auf Lager
|
Mouser-Teilenr.
511-2N2222AUB1
|
STMicroelectronics
|
Bipolartransistoren - BJT Rad-Hard 50 V, 0.8 A NPN transistor - Engineering model
|
|
145Auf Lager
|
|
|
CHF 75.00
|
|
|
CHF 70.44
|
|
|
CHF 63.51
|
|
Min.: 1
Mult.: 1
|
|
BJTs - Bipolar Transistors
|
Si
|
SMD/SMT
|
UB-4
|
NPN
|
|
|
|
Bipolartransistoren - BJT Rad-Hard 60 V, 0.6 A PNP transistor - Engineering model
- 2N2907AUB1
- STMicroelectronics
-
1:
CHF 90.44
-
21Auf Lager
|
Mouser-Teilenr.
511-2N2907AUB1
|
STMicroelectronics
|
Bipolartransistoren - BJT Rad-Hard 60 V, 0.6 A PNP transistor - Engineering model
|
|
21Auf Lager
|
|
Min.: 1
Mult.: 1
|
|
BJTs - Bipolar Transistors
|
Si
|
SMD/SMT
|
UB-4
|
PNP
|
|
|
|
IGBTs Automotive-grade trench gate field-stop 1200 V 40 A low-loss MS series IGBT in a
- GWA40MS120DF4AG
- STMicroelectronics
-
1:
CHF 5.33
-
566Auf Lager
|
Mouser-Teilenr.
511-GWA40MS120DF4AG
|
STMicroelectronics
|
IGBTs Automotive-grade trench gate field-stop 1200 V 40 A low-loss MS series IGBT in a
|
|
566Auf Lager
|
|
|
CHF 5.33
|
|
|
CHF 3.69
|
|
|
CHF 2.68
|
|
|
CHF 2.66
|
|
|
CHF 2.54
|
|
Min.: 1
Mult.: 1
|
|
IGBT Transistors
|
Si
|
Through Hole
|
TO-247-3
|
|
|
|
|
SiC-MOSFETs Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an H2PAK-7 package
- SCT012H90G3AG
- STMicroelectronics
-
1:
CHF 16.65
-
151Auf Lager
-
1’000erwartet ab 17.08.2026
|
Mouser-Teilenr.
511-SCT012H90G3AG
|
STMicroelectronics
|
SiC-MOSFETs Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an H2PAK-7 package
|
|
151Auf Lager
1’000erwartet ab 17.08.2026
|
|
|
CHF 16.65
|
|
|
CHF 11.95
|
|
|
CHF 11.61
|
|
|
CHF 10.85
|
|
Min.: 1
Mult.: 1
|
|
SiC MOSFETS
|
SiC
|
SMD/SMT
|
H2PAK-7
|
N-Channel
|
|
|
|
SiC-MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an H2PAK-7 package
- SCT018H65G3AG
- STMicroelectronics
-
1:
CHF 12.54
-
191Auf Lager
|
Mouser-Teilenr.
511-SCT018H65G3AG
|
STMicroelectronics
|
SiC-MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an H2PAK-7 package
|
|
191Auf Lager
|
|
|
CHF 12.54
|
|
|
CHF 8.85
|
|
|
CHF 8.53
|
|
|
CHF 8.07
|
|
|
CHF 7.54
|
|
Min.: 1
Mult.: 1
|
|
SiC MOSFETS
|
SiC
|
SMD/SMT
|
H2PAK-7
|
N-Channel
|
|
|
|
SiC-MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an HiP247-4 package
- SCT018W65G3-4AG
- STMicroelectronics
-
1:
CHF 12.65
-
532Auf Lager
|
Mouser-Teilenr.
511-SCT018W65G3-4AG
|
STMicroelectronics
|
SiC-MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an HiP247-4 package
|
|
532Auf Lager
|
|
|
CHF 12.65
|
|
|
CHF 9.97
|
|
|
CHF 8.20
|
|
|
CHF 8.00
|
|
|
CHF 7.61
|
|
Min.: 1
Mult.: 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
HiP-247-4
|
N-Channel
|
|
|
|
SiC-MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A
- SCT027W65G3-4AG
- STMicroelectronics
-
1:
CHF 10.46
-
338Auf Lager
|
Mouser-Teilenr.
511-SCT027W65G3-4AG
|
STMicroelectronics
|
SiC-MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A
|
|
338Auf Lager
|
|
|
CHF 10.46
|
|
|
CHF 7.82
|
|
|
CHF 6.75
|
|
|
CHF 5.98
|
|
Min.: 1
Mult.: 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
HiP-247-4
|
N-Channel
|
|
|
|
SiC-MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A
- SCT040W120G3-4AG
- STMicroelectronics
-
1:
CHF 10.65
-
693Auf Lager
|
Mouser-Teilenr.
511-SCT040W120G3-4AG
|
STMicroelectronics
|
SiC-MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A
|
|
693Auf Lager
|
|
|
CHF 10.65
|
|
|
CHF 7.44
|
|
|
CHF 6.09
|
|
Min.: 1
Mult.: 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
HiP-247-4
|
N-Channel
|
|
|
|
SiC-MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247 package
- SCT040W120G3AG
- STMicroelectronics
-
1:
CHF 10.57
-
599Auf Lager
|
Mouser-Teilenr.
511-SCT040W120G3AG
|
STMicroelectronics
|
SiC-MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247 package
|
|
599Auf Lager
|
|
|
CHF 10.57
|
|
|
CHF 7.39
|
|
|
CHF 6.04
|
|
Min.: 1
Mult.: 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
HiP-247-3
|
N-Channel
|
|
|
|
SiC-MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HiP247-4 package
- SCT070W120G3-4AG
- STMicroelectronics
-
1:
CHF 10.18
-
368Auf Lager
-
1’200erwartet ab 19.10.2026
|
Mouser-Teilenr.
511-SCT070W120G3-4AG
|
STMicroelectronics
|
SiC-MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HiP247-4 package
|
|
368Auf Lager
1’200erwartet ab 19.10.2026
|
|
|
CHF 10.18
|
|
|
CHF 7.57
|
|
|
CHF 6.47
|
|
|
CHF 5.79
|
|
Min.: 1
Mult.: 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
HiP-247-4
|
N-Channel
|
|
|
|
MOSFETs Automotive-grade N-channel 650V, 56 mOhm typ., 53 A MDmesh DM6 Power MOSFET
- SH63N65DM6AG
- STMicroelectronics
-
1:
CHF 18.62
-
194Auf Lager
|
Mouser-Teilenr.
511-SH63N65DM6AG
|
STMicroelectronics
|
MOSFETs Automotive-grade N-channel 650V, 56 mOhm typ., 53 A MDmesh DM6 Power MOSFET
|
|
194Auf Lager
|
|
|
CHF 18.62
|
|
|
CHF 14.55
|
|
|
CHF 10.21
|
|
|
CHF 10.21
|
|
|
CHF 9.72
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
SMD/SMT
|
ACEPACK SMIT-9
|
N-Channel
|
|
|
|
MOSFETs Automotive grade N-channel 650V 35 mOhm 64A MDmesh DM6 half-bridge Power MOSFET
- SH68N65DM6AG
- STMicroelectronics
-
1:
CHF 15.44
-
191Auf Lager
|
Mouser-Teilenr.
511-SH68N65DM6AG
|
STMicroelectronics
|
MOSFETs Automotive grade N-channel 650V 35 mOhm 64A MDmesh DM6 half-bridge Power MOSFET
|
|
191Auf Lager
|
|
|
CHF 15.44
|
|
|
CHF 11.03
|
|
|
CHF 9.84
|
|
|
CHF 9.84
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
|
|
N-Channel
|
|
|
|
IGBT-Module SLLIMM high power IPM, 3-phase inverter, 10 A, 1200 V short-circuit rugged IGBT
- STGIK10M120T
- STMicroelectronics
-
1:
CHF 34.75
-
69Auf Lager
|
Mouser-Teilenr.
511-STGIK10M120T
|
STMicroelectronics
|
IGBT-Module SLLIMM high power IPM, 3-phase inverter, 10 A, 1200 V short-circuit rugged IGBT
|
|
69Auf Lager
|
|
Min.: 1
Mult.: 1
|
|
IGBT Modules
|
Si
|
Through Hole
|
SDIPHP-30
|
|
|
|
|
IGBTs Automotive ACEPACK SMIT half-bridge 650 V, 80 A HB series IGBT with diode
- STGSH80HB65DAG
- STMicroelectronics
-
1:
CHF 15.72
-
189Auf Lager
|
Mouser-Teilenr.
511-STGSH80HB65DAG
|
STMicroelectronics
|
IGBTs Automotive ACEPACK SMIT half-bridge 650 V, 80 A HB series IGBT with diode
|
|
189Auf Lager
|
|
|
CHF 15.72
|
|
|
CHF 11.25
|
|
|
CHF 10.07
|
|
|
CHF 10.07
|
|
Min.: 1
Mult.: 1
|
|
IGBT Transistors
|
Si
|
SMD/SMT
|
ACEPACK-5
|
|
|
|
|
IGBTs Trench gate field-stop 1200 V 50 A high-speed H series IGBT
- STGYA50H120DF2
- STMicroelectronics
-
1:
CHF 5.14
-
550Auf Lager
|
Mouser-Teilenr.
511-STGYA50H120DF2
|
STMicroelectronics
|
IGBTs Trench gate field-stop 1200 V 50 A high-speed H series IGBT
|
|
550Auf Lager
|
|
|
CHF 5.14
|
|
|
CHF 3.61
|
|
|
CHF 3.16
|
|
|
CHF 3.10
|
|
Min.: 1
Mult.: 1
|
|
IGBT Transistors
|
Si
|
Through Hole
|
|
|
|
|
|
MOSFETs Automotive-grade N-channel 1200 V, 1.45 Ohm typ., 7 A MDmesh K5 Power MOSFET
- STH12N120K5-2AG
- STMicroelectronics
-
1:
CHF 9.73
-
686Auf Lager
-
1’000erwartet ab 06.04.2026
|
Mouser-Teilenr.
511-STH12N120K5-2AG
|
STMicroelectronics
|
MOSFETs Automotive-grade N-channel 1200 V, 1.45 Ohm typ., 7 A MDmesh K5 Power MOSFET
|
|
686Auf Lager
1’000erwartet ab 06.04.2026
|
|
|
CHF 9.73
|
|
|
CHF 7.88
|
|
|
CHF 6.57
|
|
|
CHF 5.97
|
|
|
CHF 5.47
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
SMD/SMT
|
H2PAK-2
|
N-Channel
|
|