Infineon Technologies QDR™-II DDR-II Sync SRAM

Infineon Technologies QDR™-II DDR-II Sync SRAM offers a maximum speed of 333MHz, densities up to 144Mb, read latencies of 1.5 or 2.5 cycles, burst length of 2 or 4, and is available in an industry-standard 165-ball FBGA package. The QDR-II family also includes double data rate (DDR-II) devices. DDR-II devices are similar to QDR-II devices, except that all DDR devices have a burst length of 2 and a single data rate address bus. Additionally, DDR-II is available in SIO (separate I/O) or CIO (common I/O) options. SIO devices provide independent read and write ports, eliminating the data bus "turnaround" time found in CIO devices. CIO devices provide a single port for reads and write, reducing the number of required data pin connections.

Features

  • High performance, dual-port SRAM memory or double data rate (DDR-II) devices
  • All DDR devices have a burst length of 2 and a single data rate address bus
  • SIO devices provide independent read and write ports, eliminating the data bus "turnaround" time
  • Maximum frequency of 333MHz
  • Maximum random transaction rate
    • 333 MT/s (Burst of 4)
    • 667 MT/s (Burst of 2)
  • Density of 18MB to 144MB
  • Bus width of x18, x36
  • Burst length of 2, 4
  • FBGA165 Package
  • Read latency of 1.5, 2.5 cycles
  • Core voltage of 1.8V
  • I/O voltage of 1.8V 
Veröffentlichungsdatum: 2014-03-27 | Aktualisiert: 2024-06-25