MSC090SMA070S

Microchip Technology
494-MSC090SMA070S
MSC090SMA070S

Mfr.:

Description:
SiC MOSFETs MOSFET SIC 700 V 90 mOhm TO-268
View in Development Tools Selector

Datasheet:
ECAD Model:
Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.
More Information
Learn more about Microchip Technology MSC090SMA070S

Product Attribute Attribute Value Select Attribute
Microchip
Product Category: SiC MOSFETs
RoHS:  
SMD/SMT
D3PAK-3
1 Channel
700 V
25 A
111 mOhms
- 10 V, + 23 V
1.9 V
38 nC
- 55 C
+ 175 C
91 W
Enhancement
Brand: Microchip Technology
Configuration: Single
Packaging: Tube
Product Type: SiC MOSFETS
Factory Pack Quantity: 30
Subcategory: Transistors
Transistor Polarity: N-Channel
Unit Weight: 6.200 g
Products found:
To show similar products, select at least one checkbox
Select at least one checkbox above to show similar products in this category.
Attributes selected: 0

This functionality requires JavaScript to be enabled.

Compliance Codes
CNHTS:
8541290000
USHTS:
8541290065
ECCN:
EAR99
Origin Classifications
Country of Origin:
Philippines
Assembly Country of Origin:
Not available
Country of Diffusion:
Not available
The country is subject to change at the time of shipment.

Silicon Carbide (SiC) MOSFETs

Microchip Technology Silicon Carbide (SiC) MOSFETs offer superior dynamic and thermal performance over conventional Silicon (Si) power MOSFETs. These MOSFETs have low capacitances, low gate charge, fast switching speed, and good avalanche ruggedness. The SiC MOSFETs can stabilize operation at 175°C high junction temperature. These MOSFETs provide high efficiency with low switching losses. The SiC MOSFETs do not require any freewheeling diodes. Typical applications include smart grid transmission and distribution, induction heating and welding, and power supply and distribution.

Silicon Carbide (SiC) Semiconductors

Microchip Technology Silicon Carbide (SiC) Semiconductors are an innovative option for power electronic designers looking to improve system efficiency, smaller form factor, and higher operating temperature in products covering industrial, medical, military/aerospace, aviation, and communication market segments. Microchip's next-generation SiC MOSFETs and SiC Schottky Barrier Diodes (SBDs) are designed with high repetitive Unclamped Inductive Switching (UIS) capability, and its SiC MOSFETs maintain high UIS capability at approximately 10J/cm2 to 15J/cm2 and robust short-circuit protection at 3ms to 5ms. The Microchip Technology SiC SBDs are designed with balanced surge current, forward voltage, thermal resistance, and thermal capacitance ratings at low reverse currents for lower switching loss. In addition, SiC MOSFET and SiC SBD can be paired together for use in modules.

In Stock: 177

Stock:
177 Can Dispatch Immediately
Factory Lead Time:
13 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
CHF -.--
Ext. Price:
CHF -.--
Est. Tariff:

Pricing (CHF)

Qty. Unit Price
Ext. Price
CHF 3.88 CHF 3.88
CHF 3.58 CHF 35.80
CHF 3.38 CHF 101.40
CHF 3.26 CHF 391.20
5’010 Quote

An unexpected error has occurred.


Have a question? Please visit the Help Centre.
For questions about a specific order, please log in to your account.

If you encounter further problems, please contact us on 800-346-6873 or email help@mouser.com.