MT41K512M8DA-093:P

Name: Micron Technology MT41K512M8DA-093:P
Brand: Micron
SKU: 340-265839-TRAY
Price: 52.2 CHF
Availability: InStock

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Mouser No:

340-265839-TRAY

Mfr. No:

MT41K512M8DA-093:P

Mfr.:

Micron

Description:

DRAM DDR3 4Gbit 8 78/117TFBGA 1 CT

Lifecycle:

End of Life:

Scheduled for obsolescence and will be discontinued by the manufacturer.

Datasheet:

MT41K512M8DA-093:P Datasheet (PDF)

ECAD Model:

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More Information

Learn more about Micron MT41K512M8DA-093:P

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Micron Technology
Product Category:	DRAM
RoHS:
Type:	SDRAM - DDR3L
Memory Size:	4 Gbit
Data Bus Width:	8 bit
Maximum Clock Frequency:	1.066 GHz
Package/Case:	FBGA-78
Organisation:	512 M x 8
Access Time:	13.09 ns
Supply Voltage - Min:	1.283 V
Supply Voltage - Max:	1.45 V
Minimum Operating Temperature:	0 C
Maximum Operating Temperature:	+ 95 C
Series:	MT41K
Packaging:	Tray
Brand:	Micron
Moisture Sensitive:	Yes
Mounting Style:	SMD/SMT
Product Type:	DRAM
Factory Pack Quantity:	1440
Subcategory:	Memory & Data Storage
Unit Weight:	1.233 g

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Datasheet

MT41K512M8DA-093:P Datasheet (PDF)

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Compliance Codes

CNHTS:: 8542329010
CAHTS:: 8542320020
USHTS:: 8542320036
MXHTS:: 8542320299
ECCN:: EAR99

Origin Classifications

Country of Origin:: Taiwan
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

MT41x DDR3 SDRAMs

Alliance Memory MT41x DDR3 SDRAMs use double data rate architecture with an interface to transfer two data words per clock cycle at I/O pins. The MT41x DDR3's double data rate architecture is an 8n-prefetch architecture that helps to achieve high-speed operations. These SDRAMs operate from CK and CK# differential clock inputs. The MT41x DDR3 employs a burst-orientated approach to read and write with access starting at the selected location and continuing in a programmed sequence. These SDRAMs use READ and WRITE BL8 and BC4. The MT41x DDR3 SRAMs can operate concurrently due to their pipelined and multibank architecture. This helps in providing high bandwidth by hiding row precharge and activation time. These SDRAMs feature self-refresh mode, power-saving mode, and power-down mode.