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STGY80H65DFB

STMicroelectronics

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See Product Specifications

Mouser No:

511-STGY80H65DFB

Mfr. No:

STGY80H65DFB

Mfr.:

STMicroelectronics

Description:

IGBTs Trench gte FieldStop IGBT 650V 80A

Complete Your Design

Lifecycle:

End of Life:

Scheduled for obsolescence and will be discontinued by the manufacturer.

Datasheet:

STGY80H65DFB Datasheet (PDF)

ECAD Model:

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More Information

Learn more about STMicroelectronics STGY80H65DFB

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	IGBTs
RoHS:
Technology:	Si
Package/Case:	Max247-3
Mounting Style:	Through Hole
Configuration:	Single
Collector- Emitter Voltage VCEO Max:	650 V
Collector-Emitter Saturation Voltage:	1.9 V
Maximum Gate Emitter Voltage:	- 20 V, 20 V
Continuous Collector Current at 25 C:	120 A
Pd - Power Dissipation:	469 W
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Series:	STGY80H65
Packaging:	Tube
Brand:	STMicroelectronics
Continuous Collector Current Ic Max:	80 A
Gate-Emitter Leakage Current:	250 nA
Product Type:	IGBT Transistors
Factory Pack Quantity:	30
Subcategory:	IGBTs
Unit Weight:	5 g

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Filter Document:

Datasheet

STGY80H65DFB Datasheet (PDF)

PCN

Product / Process Change Notification (PDF)

Compliance Codes

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290055
JPHTS:: 8541290100
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 85412999
ECCN:: EAR99

Origin Classifications

Country of Origin:: China
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

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In Stock: 28

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Pricing (CHF)

Qty.	Unit Price	Ext. Price
	CHF 10.58	CHF 10.58
	CHF 7.47	CHF 74.70