π-MOS VII MOSFETs

Toshiba π-MOS VII MOSFETs are 10V Gate Drive, single N-channel devices, combining π-MOS technology with a planar process to provide a wide selection of voltage and RDS(ON) ratings. These high-voltage MOSFETs offer a drain-source voltage range of 250V up to 650V and a drain current range from 2A to 20A. Vishay π-MOS VII MOSFETs are offered in TO-220-3 and TO-252 through-hole packages and compact DPAK-3 and PW-Mold-3 surface mount packages.

Ergebnisse: 68
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Menge RoHS ECAD Model Technologie
Montageart
Verpackung/Gehäuse
Transistorpolung
Anzahl der Kanäle
Vds - Drain-Source-Durchschlagspannung
Id - Drain-Gleichstrom
Rds On - Drain-Source-Widerstand
Vgs - Gate-Source-Spannung
Vgs th - Gate-Source-Schwellspannung
Qg - Gate-Ladung
Minimale Betriebstemperatur
Maximale Betriebstemperatur
Pd - Verlustleistung
Kanalmodus
Handelsname
Verpackung
Toshiba MOSFETs N-Ch MOS 5A 500V 80W 490pF 1.5 Ohm
Datenblatt
2’739Auf Lager
MouseReel verfügbar
Min.: 1
Mult.: 1
: 2’000

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 500 V 5 A 1.3 Ohms - 30 V, 30 V 4.4 V 11 nC - 55 C + 150 C 80 W Enhancement MOSVII Reel, Cut Tape, MouseReel
Toshiba MOSFETs N-Ch 200V 70A 410W MOSVII 160nC .0029
Datenblatt
75Auf Lager
Min.: 1
Mult.: 1

Si Through Hole TO-3PN-3 N-Channel 1 Channel 200 V 70 A 27 mOhms - 20 V, 20 V 3.5 V 160 nC - 55 C + 150 C 410 W Enhancement MOSVII
Toshiba MOSFETs N-Ch MOS 4A 525V 35W 490pF 1.7 Ohm
Datenblatt
300Auf Lager
Min.: 1
Mult.: 1

Si Through Hole TO-220FP-3 N-Channel 1 Channel 525 V 4 A 1.7 Ohms 35 W MOSVII
Toshiba MOSFETs N-Ch MOS 2.5A 650V 35W 490pF 2.51
Datenblatt
240Auf Lager
Min.: 1
Mult.: 1

Si Through Hole TO-220FP-3 N-Channel 1 Channel 650 V 2.5 A 2.51 Ohms 35 W MOSVII Tube
Toshiba MOSFETs N-Ch MOS 3.7A 600V 80W 540pF 2.0 Ohm
Datenblatt
55Auf Lager
MouseReel verfügbar
Min.: 1
Mult.: 1
: 2’000

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 600 V 3.7 A 2 Ohms - 30 V, 30 V 4.4 V 11 nC + 150 C 80 W Enhancement MOSVII Reel, Cut Tape, MouseReel
Toshiba MOSFETs N-Ch MOS 3A 500V 60W 280pF 3 Ohm
Datenblatt
1’997Auf Lager
MouseReel verfügbar
Min.: 1
Mult.: 1
: 2’000

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 500 V 3 A 3 Ohms - 30 V, 30 V 2.4 V 7 nC - 55 C + 150 C 60 W Enhancement MOSVII Reel, Cut Tape, MouseReel
Toshiba MOSFETs N-ch 600V 2.5A 30w 2.8 Ohm
Datenblatt
41Auf Lager
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 2.5 A 2.8 Ohms - 30 V, 30 V 2.4 V 9 nC - 55 C + 150 C 30 W Enhancement MOSVII Tube
Toshiba MOSFETs N-Ch MOS 5A 550V 35W 540pF 1.7 Ohm
Datenblatt
250Auf Lager
Min.: 1
Mult.: 1

Si Through Hole TO-220FP-3 N-Channel 1 Channel 550 V 5 A 1.7 Ohms 35 W MOSVII Tube
Toshiba MOSFETs TO220 800V 5A N-CH MOSFET
Datenblatt
147Auf Lager
Min.: 1
Mult.: 1

Si Through Hole TO-220SIS-3 N-Channel 1 Channel 800 V 5 A 2.4 Ohms - 30 V, 30 V 2.5 V 20 nC - 55 C + 150 C 40 W Enhancement MOSVII Tube
Toshiba MOSFETs X33 Pb-F POWER MOSFET TRANSISTOR TO-220SIS PD=40W F=1MHZ
Datenblatt
111Auf Lager
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 900 V 4.5 A 3.1 Ohms - 30 V, 30 V 2.5 V 20 nC - 55 C + 150 C 40 W Enhancement MOSVII Tube
Toshiba MOSFETs N-Ch MOS 10A 500V 45W 1050pF 0.72
Datenblatt
237Auf Lager
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 500 V 10 A 620 mOhms - 30 V, 30 V 2 V 20 nC - 55 C + 150 C 45 W Enhancement MOSVII Tube
Toshiba MOSFETs N-Ch MOS 10A 40V 25W 410pF 0.029
Datenblatt
103Auf Lager
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 450 V 11 A 500 mOhms - 30 V, 30 V 2 V 20 nC - 55 C + 150 C 40 W Enhancement MOSVII Tube
Toshiba MOSFETs N-Ch MOS 12A 600V 45W 1800pF 0.55
Datenblatt
199Auf Lager
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 12 A 550 mOhms - 30 V, 30 V 2 V 38 nC - 55 C + 150 C 45 W Enhancement MOSVII Tube
Toshiba MOSFETs N-Ch MOS 13A 500V 45W 1550pF 0.47
Datenblatt
114Auf Lager
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 500 V 12.5 A 390 mOhms - 30 V, 30 V 4 V 28 nC - 55 C + 150 C 45 W Enhancement MOSVII Tube
Toshiba MOSFETs X33 Pb-F POWER MOSFET TRANSISTOR DPAK-OS PD=96W F=1MHZ
Datenblatt
1’396Auf Lager
2’000erwartet ab 07.08.2026
MouseReel verfügbar
Min.: 1
Mult.: 1
: 2’000

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 250 V 13 A 250 mOhms - 20 V, 20 V 1.5 V 25 nC - 55 C + 150 C 96 W Enhancement MOSVII Reel, Cut Tape, MouseReel
Toshiba MOSFETs X33 Pb-F POWER MOSFET TRANSISTOR TO-220SIS PD=45W F=1MHZ
Datenblatt
83Auf Lager
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 300 V 18 A 139 mOhms - 20 V, 20 V 1.5 V 60 nC - 55 C + 150 C 45 W Enhancement MOSVII Tube
Toshiba MOSFETs N-Ch MOS 18A 500V 50W 2600pF 0.27
Datenblatt
91Auf Lager
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 500 V 18 A 270 mOhms - 30 V, 30 V 2 V 45 nC - 55 C + 150 C 50 W Enhancement MOSVII Tube
Toshiba MOSFETs N-Ch MOS 19A 450V 50W 2600pF 0.25
Datenblatt
53Auf Lager
Min.: 1
Mult.: 1

Si Through Hole TO-220FP-3 N-Channel 1 Channel 450 V 19 A 250 mOhms 50 W MOSVII Tube
Toshiba MOSFETs N-Ch MOS 2A 650V 30W 380pF 3.26
Datenblatt
191Auf Lager
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 2 A 3.26 Ohms - 30 V, 30 V 2.4 V 9 nC - 55 C + 150 C 30 W Enhancement MOSVII Tube
Toshiba MOSFETs N-Ch MOS 3A 650V 35W 540pF 2.25 Ohm
Datenblatt
134Auf Lager
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 3 A 2.25 Ohms - 30 V, 30 V 2.4 V 11 nC - 55 C + 150 C 35 W Enhancement MOSVII Tube
Toshiba MOSFETs N-Ch MOS 4A 500V 30W 380pF 2.0 Ohm
Datenblatt
268Auf Lager
Min.: 1
Mult.: 1

Si Through Hole TO-220FP-3 N-Channel 1 Channel 500 V 4 A 2 Ohms 30 W MOSVII Tube
Toshiba MOSFETs X33 Pb-F POWER MOSFET TRANSISTOR DP(OS) MOQ=2000 V=600 PD=80W F=1MHZ
Datenblatt
1’354Auf Lager
MouseReel verfügbar
Min.: 1
Mult.: 1
: 2’000

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 600 V 4 A 1.7 Ohms - 30 V, 30 V 2.4 V 12 nC - 55 C + 150 C 100 W Enhancement MOSVII Reel, Cut Tape, MouseReel
Toshiba MOSFETs N-Ch FET 650V 2.6s IDSS 10 uA 1.2 Ohm
Datenblatt
164Auf Lager
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 5 A 1.43 Ohms - 30 V, 30 V 2 V 16 nC - 55 C + 150 C 40 W Enhancement MOSVII Tube
Toshiba MOSFETs N-Ch FET 650V 4.0s IDSS 10 uA .95 Ohm
Datenblatt
337Auf Lager
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 6 A 1.11 Ohms - 30 V, 30 V 2 V 20 nC - 55 C + 150 C 45 W Enhancement MOSVII Tube
Toshiba MOSFETs N-Ch MOS 7A 500V 35W 600pF 1.22
Datenblatt
5Auf Lager
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 500 V 7 A 1 Ohms - 30 V, 30 V 4.4 V 12 nC - 55 C + 150 C 35 W Enhancement MOSVII Tube