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|
SiC-MOSFETs SIC_DISCRETE
- AIMW120R045M1XKSA1
- Infineon Technologies
-
1:
CHF 17.80
-
736Auf Lager
-
NRND
|
Mouser-Teilenr.
726-AIMW120R045M1XKS
NRND
|
Infineon Technologies
|
SiC-MOSFETs SIC_DISCRETE
|
|
736Auf Lager
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
1.2 kV
|
52 A
|
59 mOhms
|
- 7 V, + 20 V
|
5.7 V
|
57 nC
|
- 55 C
|
+ 175 C
|
228 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC-MOSFETs CoolSiC 1700 V SiC Trench MOSFET in TO-263-7 package
- IMBF170R1K0M1XTMA1
- Infineon Technologies
-
1:
CHF 4.66
-
6’783Auf Lager
-
4’000erwartet ab 07.01.2027
|
Mouser-Teilenr.
726-IMBF170R1K0M1XTM
|
Infineon Technologies
|
SiC-MOSFETs CoolSiC 1700 V SiC Trench MOSFET in TO-263-7 package
|
|
6’783Auf Lager
4’000erwartet ab 07.01.2027
|
|
|
CHF 4.66
|
|
|
CHF 2.93
|
|
|
CHF 2.19
|
|
|
CHF 1.87
|
|
|
CHF 1.74
|
|
|
CHF 1.67
|
|
Min.: 1
Mult.: 1
:
1’000
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.7 kV
|
5.2 A
|
1 Ohms
|
- 10 V, + 20 V
|
4.5 V
|
5 nC
|
- 55 C
|
+ 175 C
|
68 W
|
Enhancement
|
CoolSiC
|
|
|
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SiC-MOSFETs CoolSiC 1200V SiC Trench MOSFET in TO247-3 package
- IMW120R140M1HXKSA1
- Infineon Technologies
-
1:
CHF 6.46
-
285Auf Lager
-
NRND
|
Mouser-Teilenr.
726-IMW120R140M1HXKS
NRND
|
Infineon Technologies
|
SiC-MOSFETs CoolSiC 1200V SiC Trench MOSFET in TO247-3 package
|
|
285Auf Lager
|
|
|
CHF 6.46
|
|
|
CHF 4.22
|
|
|
CHF 3.47
|
|
|
CHF 3.03
|
|
|
CHF 2.87
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
1.2 kV
|
19 A
|
182 mOhms
|
- 7 V, + 23 V
|
3.5 V
|
13 nC
|
- 55 C
|
+ 175 C
|
94 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC-MOSFETs SILICON CARBIDE MOSFET
- IMW65R027M1HXKSA1
- Infineon Technologies
-
1:
CHF 12.86
-
1’221Auf Lager
-
NRND
|
Mouser-Teilenr.
726-IMW65R027M1HXKSA
NRND
|
Infineon Technologies
|
SiC-MOSFETs SILICON CARBIDE MOSFET
|
|
1’221Auf Lager
|
|
|
CHF 12.86
|
|
|
CHF 9.80
|
|
|
CHF 8.17
|
|
|
CHF 7.27
|
|
|
CHF 6.88
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
650 V
|
47 A
|
34 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
62 nC
|
- 55 C
|
+ 150 C
|
189 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC-MOSFETs SILICON CARBIDE MOSFET
- IMZA65R048M1HXKSA1
- Infineon Technologies
-
1:
CHF 8.82
-
42Auf Lager
-
240erwartet ab 24.08.2026
-
NRND
|
Mouser-Teilenr.
726-IMZA65R048M1HXKS
NRND
|
Infineon Technologies
|
SiC-MOSFETs SILICON CARBIDE MOSFET
|
|
42Auf Lager
240erwartet ab 24.08.2026
|
|
|
CHF 8.82
|
|
|
CHF 6.24
|
|
|
CHF 5.20
|
|
|
CHF 4.62
|
|
|
CHF 4.39
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
650 V
|
39 A
|
64 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
33 nC
|
- 55 C
|
+ 150 C
|
125 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC-MOSFETs CoolSiC 1200V SiC Trench MOSFET in TO247-4 package
- IMZ120R030M1HXKSA1
- Infineon Technologies
-
1:
CHF 14.60
-
2’160Auf Bestellung
-
NRND
|
Mouser-Teilenr.
726-IMZ120R030M1HXKS
NRND
|
Infineon Technologies
|
SiC-MOSFETs CoolSiC 1200V SiC Trench MOSFET in TO247-4 package
|
|
2’160Auf Bestellung
Auf Bestellung:
720 erwartet ab 17.09.2026
Lieferzeit ab Hersteller:
52 Wochen
|
|
|
CHF 14.60
|
|
|
CHF 9.65
|
|
|
CHF 8.34
|
|
|
CHF 8.11
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
56 A
|
40 mOhms
|
- 7 V, + 23 V
|
5.7 V
|
63 nC
|
- 55 C
|
+ 150 C
|
227 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC-MOSFETs SILICON CARBIDE MOSFET
- IMZA65R072M1HXKSA1
- Infineon Technologies
-
1:
CHF 7.52
-
Nicht-auf-Lager-Vorlaufzeit 52 Wochen
-
NRND
|
Mouser-Teilenr.
726-IMZA65R072M1HXKS
NRND
|
Infineon Technologies
|
SiC-MOSFETs SILICON CARBIDE MOSFET
|
|
Nicht-auf-Lager-Vorlaufzeit 52 Wochen
|
|
|
CHF 7.52
|
|
|
CHF 5.29
|
|
|
CHF 3.88
|
|
|
CHF 3.41
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
650 V
|
28 A
|
94 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
22 nC
|
- 55 C
|
+ 150 C
|
96 W
|
Enhancement
|
CoolSiC
|
|
Liechtenstein