|
|
SiC-MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R008M2HXTMA1
- Infineon Technologies
-
1:
CHF 31.10
-
1’463Auf Lager
-
1’000Auf Bestellung
|
Mouser-Teilenr.
726-IMBG120R008M2HXT
|
Infineon Technologies
|
SiC-MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
1’463Auf Lager
1’000Auf Bestellung
|
|
Min.: 1
Mult.: 1
:
1’000
|
|
|
SMD/SMT
|
TO-263-7
|
1 Channel
|
1.2 kV
|
189 A
|
7.7 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
195 nC
|
- 55 C
|
+ 175 C
|
800 W
|
Enhancement
|
|
|
|
SiC-MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R012M2HXTMA1
- Infineon Technologies
-
1:
CHF 22.36
-
1’825Auf Lager
|
Mouser-Teilenr.
726-IMBG120R012M2HXT
|
Infineon Technologies
|
SiC-MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
1’825Auf Lager
|
|
Min.: 1
Mult.: 1
:
1’000
|
|
|
SMD/SMT
|
TO-263-7
|
1 Channel
|
1.2 kV
|
144 A
|
12.2 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
124 nC
|
- 55 C
|
+ 175 C
|
600 W
|
Enhancement
|
|
|
|
SiC-MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R017M2HXTMA1
- Infineon Technologies
-
1:
CHF 16.36
-
1’499Auf Lager
-
500erwartet ab 07.12.2026
|
Mouser-Teilenr.
726-IMBG120R017M2HXT
|
Infineon Technologies
|
SiC-MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
1’499Auf Lager
500erwartet ab 07.12.2026
|
|
Min.: 1
Mult.: 1
:
1’000
|
|
|
SMD/SMT
|
TO-263-7
|
1 Channel
|
1.2 kV
|
107 A
|
17.1 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
89 nC
|
- 55 C
|
+ 175 C
|
470 W
|
Enhancement
|
|
|
|
SiC-MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R022M2HXTMA1
- Infineon Technologies
-
1:
CHF 14.34
-
223Auf Lager
|
Mouser-Teilenr.
726-IMBG120R022M2HXT
|
Infineon Technologies
|
SiC-MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
223Auf Lager
|
|
Min.: 1
Mult.: 1
:
1’000
|
|
|
SMD/SMT
|
TO-263-7
|
1 Channel
|
1.2 kV
|
87 A
|
21.6 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
71 nC
|
- 55 C
|
+ 175 C
|
385 W
|
Enhancement
|
|
|
|
SiC-MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R026M2HXTMA1
- Infineon Technologies
-
1:
CHF 10.90
-
1’593Auf Lager
|
Mouser-Teilenr.
726-IMBG120R026M2HXT
|
Infineon Technologies
|
SiC-MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
1’593Auf Lager
|
|
Min.: 1
Mult.: 1
:
1’000
|
|
|
SMD/SMT
|
TO-263-7
|
1 Channel
|
1.2 kV
|
75 A
|
25.4 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
60 nC
|
- 55 C
|
+ 175 C
|
335 W
|
Enhancement
|
|
|
|
SiC-MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R234M2HXTMA1
- Infineon Technologies
-
1:
CHF 4.24
-
3’269Auf Lager
-
2’000Auf Bestellung
|
Mouser-Teilenr.
726-IMBG120R234M2HXT
|
Infineon Technologies
|
SiC-MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
3’269Auf Lager
2’000Auf Bestellung
|
|
Min.: 1
Mult.: 1
Max.: 1’000
:
1’000
|
|
|
SMD/SMT
|
TO-263-7
|
1 Channel
|
1.2 kV
|
8.1 A
|
233.9 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
7.9 nC
|
- 55 C
|
+ 175 C
|
80 W
|
Enhancement
|
|
|
|
SiC-MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R040M2HXTMA1
- Infineon Technologies
-
1:
CHF 9.18
-
69Auf Lager
-
1’000erwartet ab 17.12.2026
|
Mouser-Teilenr.
726-IMBG120R040M2HXT
|
Infineon Technologies
|
SiC-MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
69Auf Lager
1’000erwartet ab 17.12.2026
|
|
Min.: 1
Mult.: 1
:
1’000
|
|
|
SMD/SMT
|
TO-263-7
|
1 Channel
|
1.2 kV
|
52 A
|
39.6 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
8.1 nC
|
- 55 C
|
+ 175 C
|
250 W
|
Enhancement
|
|
|
|
SiC-MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R053M2HXTMA1
- Infineon Technologies
-
1:
CHF 7.55
-
249Auf Lager
-
1’000erwartet ab 07.12.2026
|
Mouser-Teilenr.
726-IMBG120R053M2HXT
|
Infineon Technologies
|
SiC-MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
249Auf Lager
1’000erwartet ab 07.12.2026
|
|
Min.: 1
Mult.: 1
:
1’000
|
|
|
SMD/SMT
|
TO-263-7
|
1 Channel
|
1.2 kV
|
41 A
|
52.6 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
30 nC
|
- 55 C
|
+ 175 C
|
205 W
|
Enhancement
|
|
|
|
SiC-MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R078M2HXTMA1
- Infineon Technologies
-
1:
CHF 6.61
-
227Auf Lager
-
2’000erwartet ab 03.12.2026
|
Mouser-Teilenr.
726-IMBG120R078M2HXT
|
Infineon Technologies
|
SiC-MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
227Auf Lager
2’000erwartet ab 03.12.2026
|
|
Min.: 1
Mult.: 1
:
1’000
|
|
|
SMD/SMT
|
TO-263-7
|
1 Channel
|
1.2 kV
|
29 A
|
78.1 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
20.6 nC
|
- 55 C
|
+ 175 C
|
158 W
|
Enhancement
|
|
|
|
SiC-MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R181M2HXTMA1
- Infineon Technologies
-
1:
CHF 5.20
-
150Auf Lager
-
4’000Auf Bestellung
|
Mouser-Teilenr.
726-IMBG120R181M2HXT
|
Infineon Technologies
|
SiC-MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
150Auf Lager
4’000Auf Bestellung
Auf Bestellung:
2’000 erwartet ab 07.01.2027
2’000 erwartet ab 24.06.2027
Lieferzeit ab Hersteller:
52 Wochen
|
|
Min.: 1
Mult.: 1
:
1’000
|
|
|
SMD/SMT
|
TO-263-7
|
1 Channel
|
1.2 kV
|
14.9 A
|
181.4 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
9.7 nC
|
- 55 C
|
+ 175 C
|
94 W
|
Enhancement
|
|
|
|
SiC-MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R116M2HXTMA1
- Infineon Technologies
-
1:
CHF 5.75
-
2’000erwartet ab 10.12.2026
|
Mouser-Teilenr.
726-IMBG120R116M2HXT
|
Infineon Technologies
|
SiC-MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
2’000erwartet ab 10.12.2026
|
|
Min.: 1
Mult.: 1
:
1’000
|
|
|
SMD/SMT
|
TO-263-7
|
1 Channel
|
1.2 kV
|
21.2 A
|
115.7 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
14.4 nC
|
- 55 C
|
+ 175 C
|
123 W
|
Enhancement
|
|