RFxL RF Power LDMOS Transistors

STMicroelectronics RFxL RF Power LDMOS Transistors offer high-performance intended for multiple applications with different frequency bands. The RFxL RF Power Transistors are available in B4E, B2, and LBB packages.

Results: 4
Select Image Part # Mfr. Description Datasheet Availability Pricing (CHF) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Transistor Polarity Technology Id - Continuous Drain Current Vds - Drain-Source Breakdown Voltage Rds On - Drain-Source Resistance Operating Frequency Gain Output Power Maximum Operating Temperature Mounting Style Package/Case Packaging
STMicroelectronics RF MOSFET Transistors 400 W, 50 V, 0.4 to 1 GHz RF power LDMOS transistor 110In Stock
Cut Tape
CHF 141.64
CHF 112.92
Reel
CHF 112.92
Min.: 1
Mult.: 1
: 120
N-Channel Si 2.5 A 110 V 1 Ohms 1 GHz 19 dB 400 W + 200 C SMD/SMT B4E-5 Reel, Cut Tape, MouseReel
STMicroelectronics RF MOSFET Transistors 180 W, 28 V, 1.3 to 1.6 GHz RF power LDMOS transistor 20In Stock
Cut Tape
CHF 141.64
CHF 112.92
Reel
CHF 112.92
Min.: 1
Mult.: 1
: 120
N-Channel Si 2.5 A 65 V 1 Ohms 1.6 GHz 14 dB 180 W + 200 C SMD/SMT B4E-5 Reel, Cut Tape, MouseReel
STMicroelectronics RF MOSFET Transistors 250 W 28/32 V RF power LDMOS transistor from HF to 1 GHz Non-Stocked Lead-Time 52 Weeks
Reel
CHF 158.17
Min.: 100
Mult.: 100
: 100
N-Channel Si 2.5 A 90 V 1 Ohms 1 MHz 18 dB 250 W + 200 C SMD/SMT LBB-5 Reel
STMicroelectronics RF MOSFET Transistors 75 W, 28 V, 3.1 to 3.6 GHz RF power LDMOS transistor Non-Stocked Lead-Time 52 Weeks
Reel
CHF 97.54
Min.: 120
Mult.: 120
: 120
N-Channel Si 2.5 A 60 V 1 Ohms 3.5 GHz 12.5 dB 75 W + 200 C SMD/SMT B2-3 Reel