GaN FETs – Mouser Liechtenstein

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Select	Image	Part #	Mfr.	Description	Datasheet	Availability	Pricing (CHF) Filter the results in the table by unit price based on your quantity.	Qty.	RoHS	ECAD Model	Mounting Style	Package/Case	Transistor Polarity	Number of Channels	Vds - Drain-Source Breakdown Voltage	Id - Continuous Drain Current	Rds On - Drain-Source Resistance	Vgs - Gate-Source Voltage	Vgs th - Gate-Source Threshold Voltage	Qg - Gate Charge	Minimum Operating Temperature	Maximum Operating Temperature	Channel Mode	Tradename	Technology
	GaN FETs EPC eGaN FET,100 V, 1.2 milliohm at 5 V(typ), 3.3 mm x 3.3 mm QFN EPC2367 EPC 1: CHF 6.20 16’273In Stock 6’000Expected 11/4/2026 New Product	Mfr. Part No. EPC2367 Mouser Part No 65-EPC2367 New Product	EPC	GaN FETs EPC eGaN FET,100 V, 1.2 milliohm at 5 V(typ), 3.3 mm x 3.3 mm QFN Learn More about EPC 2367 egan fets	Datasheet	16’273In Stock 6’000Expected 11/4/2026	Cut Tape CHF 6.20 CHF 3.37 CHF 3.09 CHF 2.94 CHF 2.62 Reel CHF 2.36	Min.: 1 Mult.: 1 : 3’000			SMD/SMT	QFN-5	N-Channel	1 Channel	100 V	101 A	1.2 mOhms	- 4 V, 6 V	2.5 V	17 nC	- 40 C	+ 150 C	Enhancement	eGaN FET	GaN
	GaN FETs 100 V enhancement-mode GaN power transistor, 101 A, 1.2 mOhm typ RDS(on), optimized for high-density DC-DC converters and motor drives. EPC EPC2367A EPC2367A EPC 1: CHF 5.69 Non-Stocked New At Mouser	Mfr. Part No. EPC2367A Mouser Part No 65-EPC2367A New At Mouser	EPC	GaN FETs 100 V enhancement-mode GaN power transistor, 101 A, 1.2 mOhm typ RDS(on), optimized for high-density DC-DC converters and motor drives. Learn More about EPC 2367 egan fets	Datasheet	Non-Stocked	CHF 5.69 CHF 3.81 CHF 3.06 CHF 2.72 CHF 2.19	Min.: 1 Mult.: 1

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