NTBG022N120M3S 1200V M3S Series SiC MOSFET

onsemi NTBG022N120M3S 1200V M3S Series SiC (Silicon Carbide) MOSFET is optimized for fast switching applications and offers a low 22mΩ drain-to-source on-resistance. The M3S Series SiC MOSFETs provide optimum performance when driven with an 18V gate drive but also work well with a 15V gate drive. This device features planar technology, which works reliably with a negative gate voltage drive and turns off spikes on the gate. 

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Description Datasheet Availability Pricing (CHF) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Mounting Style
Package/Case
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
Tradename
onsemi SiC MOSFETs SIC MOS D2PAK-7L 30MOHM 1200V M3
Datasheet
1’471In Stock
Cut Tape
CHF 10.20
CHF 5.90
CHF 5.82
CHF 5.50
Reel
CHF 5.50
Min.: 1
Mult.: 1
: 800
SMD/SMT D2PAK-7 1.2 kV 30 Ohms EliteSiC
onsemi SiC MOSFETs SIC MOS D2PAK-7L 22MOHM 1200V
Datasheet
779In Stock
Cut Tape
CHF 15.93
CHF 10.62
CHF 10.05
Reel
CHF 10.05
Min.: 1
Mult.: 1
: 800
SMD/SMT D2PAK-7 1 Channel 1.2 kV 58 A 30 mOhms - 10 V, + 22 V 4.4 V 148 nC - 55 C + 175 C 234 W Enhancement EliteSiC
onsemi SiC MOSFETs SIC MOS D2PAK-7L 70MOHM 1200V M3
Datasheet
128In Stock
800Expected 4/13/2027
Cut Tape
CHF 6.98
CHF 4.40
CHF 3.83
CHF 3.25
Reel
CHF 3.25
Min.: 1
Mult.: 1
: 800
SMD/SMT D2PAK-7 1 Channel 1.2 kV 37 A 91 mOhms - 10 V, + 22 V 4.4 V 49 nC - 55 C + 175 C 252 W Enhancement EliteSiC
onsemi SiC MOSFETs SIC MOS D2PAK-7L 40MOHM 1200V M3
Datasheet
16In Stock
Cut Tape
CHF 8.91
CHF 5.37
CHF 4.86
CHF 4.59
Reel
CHF 4.59
Min.: 1
Mult.: 1
: 800
SMD/SMT D2PAK-7 1 Channel 1.2 kV 51 A 52 mOhms - 10 V, + 22 V 4.4 V 70 nC - 55 C + 175 C 329 W Enhancement EliteSiC