CoolGaN™ Gen 2 650V Power Transistors

Infineon Technologies CoolGaN™ Gen 2 650V Power Transistors feature highly efficient GaN (gallium nitride) transistor technology for power conversion in a voltage range up to 650V. Infineon’s GaN technology brings the e‑mode concept to maturity with high volumes of end-to-end production. This pioneering quality ensures the highest standards and offers the most reliable performance. The enhancement mode CoolGaN™ Gen 2 650V power transistors improve system efficiency and power density with ultra-fast switching.

Results: 12
Select Image Part # Mfr. Description Datasheet Availability Pricing (CHF) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Mounting Style Transistor Polarity Number of Channels Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum Operating Temperature Maximum Operating Temperature Pd - Power Dissipation Channel Mode Technology
Infineon Technologies GaN FETs HV GAN DISCRETES 5’018In Stock
3’600Expected 11/12/2026
Cut Tape
CHF 10.24
CHF 5.80
CHF 5.72
CHF 5.66
CHF 4.86
Reel
CHF 4.86
Min.: 1
Mult.: 1
: 1’800
SMD/SMT HEMT 1 Channel 650 V 67 A 30 mOhms - 10 V 1.6 V 16 nC - 55 C + 150 C 219 W Enhancement GaN
Infineon Technologies GaN FETs HV GAN DISCRETES 4’511In Stock
Cut Tape
CHF 3.14
CHF 2.06
CHF 1.44
CHF 1.18
CHF 1.13
Reel
CHF 1.00
Min.: 1
Mult.: 1
: 5’000
SMD/SMT HEMT 1 Channel 650 V 13 A 170 mOhms - 10 V 1.6 V 2.6 nC - 55 C + 150 C 46 W Enhancement GaN
Infineon Technologies GaN FETs HV GAN DISCRETES 4’815In Stock
Cut Tape
CHF 2.31
CHF 1.50
CHF 1.03
CHF 0.829
Reel
CHF 0.658
Min.: 1
Mult.: 1
: 5’000
SMD/SMT HEMT 1 Channel 650 V 9.2 A 240 mOhms - 10 V 1.6 V 1.8 nC - 55 C + 150 C 33 W Enhancement GaN
Infineon Technologies GaN FETs HV GAN DISCRETES 4’699In Stock
Cut Tape
CHF 2.01
CHF 1.29
CHF 0.885
CHF 0.705
Reel
CHF 0.548
Min.: 1
Mult.: 1
: 5’000
SMD/SMT HEMT 1 Channel 650 V 7.2 A 330 mOhms - 10 V 1.6 V 1.4 nC - 55 C + 150 C 28 W Enhancement GaN
Infineon Technologies GaN FETs HV GAN DISCRETES 1’601In Stock
1’800Expected 2/4/2027
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CHF 8.86
CHF 5.07
CHF 4.81
CHF 4.54
CHF 3.93
Reel
CHF 3.89
Min.: 1
Mult.: 1
: 1’800
SMD/SMT HEMT 1 Channel 650 V 42 mOhms - 10 V 1.6 V 11 nC - 55 C + 150 C Enhancement GaN
Infineon Technologies GaN FETs HV GAN DISCRETES 812In Stock
Cut Tape
CHF 6.90
CHF 3.75
CHF 3.44
CHF 3.39
CHF 2.96
Reel
CHF 2.87
Min.: 1
Mult.: 1
: 1’800
SMD/SMT HEMT 1 Channel 650 V 38 A 54 mOhms - 10 V 1.6 V 8.4 nC - 55 C + 150 C 125 W GaN
Infineon Technologies GaN FETs HV GAN DISCRETES Lead-Time 26 Weeks
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CHF 5.78
CHF 3.43
CHF 2.96
CHF 2.71
CHF 2.33
Reel
CHF 2.33
Min.: 1
Mult.: 1
: 1’800
SMD/SMT HEMT 1 Channel 650 V 66 mOhms - 10 V 1.6 V 6.6 nC - 55 C + 150 C 104 W Enhancement GaN
Infineon Technologies GaN FETs HV GAN DISCRETES 1’218In Stock
Cut Tape
CHF 3.80
CHF 2.51
CHF 1.78
CHF 1.53
Reel
CHF 1.29
Min.: 1
Mult.: 1
: 1’800
SMD/SMT HEMT 1 Channel 650 V 15 A 140 mOhms - 10 V 1.6 V 3.4 nC - 40 C + 150 C Enhancement GaN
Infineon Technologies GaN FETs HV GAN DISCRETES 582In Stock
Cut Tape
CHF 10.73
CHF 7.20
CHF 6.66
CHF 5.78
Reel
CHF 5.04
Min.: 1
Mult.: 1
: 800
SMD/SMT HEMT 1 Channel 650 V 61 A 30 mOhms - 10 V 1.6 V 16 nC - 55 C + 150 C 181 W Enhancement GaN
Infineon Technologies GaN FETs HV GAN DISCRETES 457In Stock
Cut Tape
CHF 8.88
CHF 4.94
CHF 4.72
CHF 4.01
Reel
CHF 4.01
Min.: 1
Mult.: 1
: 800
SMD/SMT HEMT 1 Channel 650 V 42 mOhms - 10 V 1.6 V 11 nC - 55 C + 150 C 132 W Enhancement GaN
Infineon Technologies GaN FETs HV GAN DISCRETES 2’028In Stock
Cut Tape
CHF 7.10
CHF 3.88
CHF 3.47
Reel
CHF 3.07
CHF 3.00
Min.: 1
Mult.: 1
: 800
SMD/SMT HEMT 1 Channel 650 V 54 mOhms - 10 V 1.6 V 8.4 nC - 55 C + 150 C 104 W Enhancement GaN
Infineon Technologies GaN FETs HV GAN DISCRETES 583In Stock
Cut Tape
CHF 5.93
CHF 3.18
CHF 2.91
CHF 2.35
Reel
CHF 2.35
Min.: 1
Mult.: 1
: 800
SMD/SMT HEMT 1 Channel 650 V 66 mOhms - 10 V 1.6 V 6.6 nC - 55 C + 150 C 83 W Enhancement GaN