|
|
GaN FETs 100 V, 1.1 mOhm typ., 474 A, e-mode PowerGaN transistor
- SGT1D5R10MEA
- STMicroelectronics
-
1:
CHF 6.67
-
340In Stock
-
New Product
|
Mouser Part No
511-SGT1D5R10MEA
New Product
|
STMicroelectronics
|
GaN FETs 100 V, 1.1 mOhm typ., 474 A, e-mode PowerGaN transistor
|
|
340In Stock
|
|
|
CHF 6.67
|
|
|
CHF 4.70
|
|
|
CHF 3.80
|
|
|
CHF 3.38
|
|
|
CHF 2.72
|
|
|
CHF 2.72
|
|
Min.: 1
Mult.: 1
:
3’000
|
|
|
SMD/SMT
|
FCLGA-8
|
N-Channel
|
1 Channel
|
100 V
|
501 A
|
1.5 mOhms
|
- 4 V to + 6 V
|
2.1 V
|
15.9 nC
|
- 40 C
|
+ 150 C
|
735 W
|
Enhancement
|
GaN
|
|
|
|
GaN FETs 700 V, 53 mOhm typ., 26 A, e-mode PowerGaN transistor
- SGT070R70HTO
- STMicroelectronics
-
1:
CHF 8.02
-
374In Stock
-
New Product
|
Mouser Part No
511-SGT070R70HTO
New Product
|
STMicroelectronics
|
GaN FETs 700 V, 53 mOhm typ., 26 A, e-mode PowerGaN transistor
|
|
374In Stock
|
|
|
CHF 8.02
|
|
|
CHF 4.42
|
|
|
CHF 4.13
|
|
|
CHF 3.50
|
|
|
CHF 3.50
|
|
Min.: 1
Mult.: 1
:
1’800
|
|
|
SMD/SMT
|
TO-LL-11
|
|
|
700 V
|
26 A
|
70 mOhms
|
- 6 V, + 7 V
|
2.5 V
|
8.5 nC
|
- 55 C
|
+ 150 C
|
231 W
|
Enhancement
|
GaN
|
|
|
|
GaN FETs 700 V, 60 mOhm typ., 29 A, e-mode PowerGaN transistor
- SGT080R70ILB
- STMicroelectronics
-
1:
CHF 5.51
-
728In Stock
-
New Product
|
Mouser Part No
511-SGT080R70ILB
New Product
|
STMicroelectronics
|
GaN FETs 700 V, 60 mOhm typ., 29 A, e-mode PowerGaN transistor
|
|
728In Stock
|
|
|
CHF 5.51
|
|
|
CHF 2.94
|
|
|
CHF 2.69
|
|
|
CHF 2.52
|
|
|
CHF 2.22
|
|
|
CHF 2.13
|
|
Min.: 1
Mult.: 1
:
3’000
|
|
|
SMD/SMT
|
PowerFLAT-8
|
|
|
700 V
|
29 A
|
80 mOhms
|
- 6 V, + 7 V
|
2.5 V
|
6.2 nC
|
- 55 C
|
+ 150 C
|
188 W
|
Enhancement
|
GaN
|
|
|
|
GaN FETs 700 V, 80 mOhm typ., 21.7 A, e-mode PowerGaN transistor
- SGT105R70ILB
- STMicroelectronics
-
1:
CHF 4.79
-
768In Stock
-
New Product
|
Mouser Part No
511-SGT105R70ILB
New Product
|
STMicroelectronics
|
GaN FETs 700 V, 80 mOhm typ., 21.7 A, e-mode PowerGaN transistor
|
|
768In Stock
|
|
|
CHF 4.79
|
|
|
CHF 2.52
|
|
|
CHF 2.29
|
|
|
CHF 2.09
|
|
|
CHF 2.00
|
|
|
CHF 1.77
|
|
Min.: 1
Mult.: 1
:
3’000
|
|
|
SMD/SMT
|
PowerFLAT-8
|
|
|
700 V
|
21.7 A
|
105 mOhms
|
- 6 V, + 7 V
|
2.5 V
|
4.8 nC
|
- 55 C
|
+ 150 C
|
158 W
|
Enhancement
|
GaN
|
|
|
|
GaN FETs 700 V, 106 mOhm typ., 17 A, e-mode PowerGaN transistor
- SGT140R70ILB
- STMicroelectronics
-
1:
CHF 4.08
-
637In Stock
-
New Product
|
Mouser Part No
511-SGT140R70ILB
New Product
|
STMicroelectronics
|
GaN FETs 700 V, 106 mOhm typ., 17 A, e-mode PowerGaN transistor
|
|
637In Stock
|
|
|
CHF 4.08
|
|
|
CHF 2.91
|
|
|
CHF 2.19
|
|
|
CHF 2.11
|
|
|
View
|
|
|
CHF 1.52
|
|
|
CHF 1.79
|
|
|
CHF 1.52
|
|
|
Quote
|
|
Min.: 1
Mult.: 1
:
3’000
|
|
|
SMD/SMT
|
PowerFLAT-8
|
|
|
700 V
|
17 A
|
140 mOhms
|
- 6 V, + 7 V
|
2.5 V
|
3.5 nC
|
- 55 C
|
+ 150 C
|
113 W
|
Enhancement
|
GaN
|
|
|
|
GaN FETs 700 V, 138 mOhm typ., 11.5 A, e-mode PowerGaN transistor
- SGT190R70ILB
- STMicroelectronics
-
1:
CHF 3.25
-
790In Stock
-
New Product
|
Mouser Part No
511-SGT190R70ILB
New Product
|
STMicroelectronics
|
GaN FETs 700 V, 138 mOhm typ., 11.5 A, e-mode PowerGaN transistor
|
|
790In Stock
|
|
|
CHF 3.25
|
|
|
CHF 1.65
|
|
|
CHF 1.50
|
|
|
CHF 1.24
|
|
|
CHF 1.05
|
|
Min.: 1
Mult.: 1
:
3’000
|
|
|
SMD/SMT
|
PowerFLAT-8
|
|
|
700 V
|
11.5 A
|
190 mOhms
|
- 6 V, + 7 V
|
2.5 V
|
2.8 nC
|
- 55 C
|
+ 150 C
|
83 W
|
Enhancement
|
GaN
|
|
|
|
GaN FETs 700 V, 165 mOhm typ., 10 A, e-mode PowerGaN transistor
- SGT240R70ILB
- STMicroelectronics
-
1:
CHF 3.08
-
693In Stock
-
New Product
|
Mouser Part No
511-SGT240R70ILB
New Product
|
STMicroelectronics
|
GaN FETs 700 V, 165 mOhm typ., 10 A, e-mode PowerGaN transistor
|
|
693In Stock
|
|
|
CHF 3.08
|
|
|
CHF 1.55
|
|
|
CHF 1.41
|
|
|
CHF 1.41
|
|
Min.: 1
Mult.: 1
Max.: 100
:
3’000
|
|
|
SMD/SMT
|
PowerFLAT-8
|
|
|
700 V
|
10 A
|
240 mOhms
|
- 6 V, + 7 V
|
2.5 V
|
2 nC
|
- 55 C
|
+ 150 C
|
76 W
|
Enhancement
|
GaN
|
|
|
|
GaN FETs 700 V, 270 mOhm typ., 6 A, e-mode PowerGaN transistor
- SGT350R70GTK
- STMicroelectronics
-
1:
CHF 2.26
-
552In Stock
-
New Product
|
Mouser Part No
511-SGT350R70GTK
New Product
|
STMicroelectronics
|
GaN FETs 700 V, 270 mOhm typ., 6 A, e-mode PowerGaN transistor
|
|
552In Stock
|
|
|
CHF 2.26
|
|
|
CHF 1.11
|
|
|
CHF 1.00
|
|
|
CHF 0.802
|
|
|
CHF 0.67
|
|
|
View
|
|
|
CHF 0.773
|
|
|
CHF 0.636
|
|
Min.: 1
Mult.: 1
:
2’500
|
|
|
SMD/SMT
|
DPAK-3
|
|
|
700 V
|
6 A
|
350 mOhms
|
- 1.4 V, + 7 V
|
2.5 V
|
1.5 nC
|
- 55 C
|
+ 150 C
|
47 W
|
Enhancement
|
GaN
|
|
|
|
GaN FETs 700 V, 165 mOhm typ., 10 A, e-mode PowerGaN transistor
- SGT240R70ITK
- STMicroelectronics
-
1:
CHF 2.31
-
2’500Expected 11/20/2026
-
New Product
|
Mouser Part No
511-SGT240R70ITK
New Product
|
STMicroelectronics
|
GaN FETs 700 V, 165 mOhm typ., 10 A, e-mode PowerGaN transistor
|
|
2’500Expected 11/20/2026
|
|
|
CHF 2.31
|
|
|
CHF 1.14
|
|
|
CHF 1.03
|
|
|
CHF 0.829
|
|
|
CHF 0.691
|
|
|
View
|
|
|
CHF 0.798
|
|
|
CHF 0.66
|
|
Min.: 1
Mult.: 1
:
2’500
|
|
|
SMD/SMT
|
DPAK-2
|
N-Channel
|
1 Channel
|
700 V
|
10 A
|
240 mOhms
|
- 6 V, + 7 V
|
2.5 V
|
2 nC
|
- 55 C
|
+ 150 C
|
77 W
|
Enhancement
|
GaN
|
|
|
|
GaN FETs 100 V, 2.9 mOhm typ., 201 A, e-mode PowerGaN transistor
- SGT3D5R10MEB
- STMicroelectronics
-
1:
CHF 3.00
-
500On Order
-
New Product
|
Mouser Part No
511-SGT3D5R10MEB
New Product
|
STMicroelectronics
|
GaN FETs 100 V, 2.9 mOhm typ., 201 A, e-mode PowerGaN transistor
|
|
500On Order
|
|
|
CHF 3.00
|
|
|
CHF 1.96
|
|
|
CHF 1.42
|
|
|
CHF 1.19
|
|
|
CHF 1.03
|
|
|
View
|
|
|
CHF 1.10
|
|
|
CHF 0.945
|
|
Min.: 1
Mult.: 1
:
3’000
|
|
|
SMD/SMT
|
FCLGA-8
|
N-Channel
|
1 Channel
|
100 V
|
201 A
|
3.5 mOhms
|
- 4 V to + 6 V
|
2.1 V
|
6.3 nC
|
- 40 C
|
+ 150 C
|
255 W
|
Enhancement
|
GaN
|
|
|
|
GaN FETs 650 V, 49 mOhm typ., 25 A, e-mode PowerGaN transistor
- SGT65R65AL
- STMicroelectronics
-
3’000:
CHF 4.41
-
Non-Stocked Lead-Time 52 Weeks
|
Mouser Part No
511-SGT65R65AL
|
STMicroelectronics
|
GaN FETs 650 V, 49 mOhm typ., 25 A, e-mode PowerGaN transistor
|
|
Non-Stocked Lead-Time 52 Weeks
|
|
Min.: 3’000
Mult.: 3’000
:
3’000
|
|
|
SMD/SMT
|
PowerFLAT-4
|
N-Channel
|
1 Channel
|
650 V
|
25 A
|
65 mOhms
|
+ 6 V
|
1.8 V
|
5.4 nC
|
- 55 C
|
+ 150 C
|
305 W
|
|
GaN-on-Si
|
|
