Pseudo SRAM/CellularRAM

ISSI Pseudo SRAM/CellularRAM Devices offer the best of both DRAM and SRAM features. ISSI PSRAM/CellularRAM has an SRAM-like architecture. Unlike DRAM, there is a hidden re-fresh feature that does not require a physical refresh. These CellularRAM devices are designed in accordance with the CellularRAM standards and are available in CRAM 1.5 and CRAM 2.0.

Results: 12
Select Image Part #
 Mfr.
Description Datasheet Availability Pricing (CHF) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Type
Memory Size
Data Bus Width
Maximum Clock Frequency
Package/Case
Organisation
Access Time
Supply Voltage - Min
Supply Voltage - Max
Minimum Operating Temperature
Maximum Operating Temperature
ISSI DRAM 32Mb, SerialRAM, Continuous Operation, 1.65V-1.95V, 104MHz, 8 pin SOIC 150 mil, RoHS
Datasheet
86In Stock
Min.: 1
Mult.: 1

PSRAM (Pseudo SRAM) 32 Mbit 8 bit 104 MHz SOIC-8 4 M x 8 7 ns 1.65 V 1.95 V - 40 C + 85 C
ISSI DRAM 64Mb, QUADRAM, 2.7V-3.6V, 200MHz, 24-ball TFBGA, RoHS 389In Stock
Min.: 1
Mult.: 1

SDRAM 64 Mbit 200 MHz TFBGA-24 2.7 V 3.6 V
ISSI DRAM 64Mb, OctalRAM, 8Mbx8, 1.8V, 200MHz, 24-ball TFBGA, RoHS
Datasheet
885In Stock
Min.: 1
Mult.: 1

PSRAM (Pseudo SRAM) 64 Mbit 8 bit 200 MHz TFBGA-24 8 M x 8 5 ns 1.7 V 1.95 V - 40 C + 85 C
ISSI DRAM 64Mb, HyperRAM, 8Mbx8, 1.8V, 200MHz, 24-ball TFBGA, RoHS
Datasheet
736In Stock
Min.: 1
Mult.: 1

HyperRAM 64 Mbit 8 bit 200 MHz TFBGA-24 8 M x 8 35 ns 1.7 V 2 V - 40 C + 85 C
ISSI DRAM 64Mb, HyperRAM, 8Mbx8, 3.0V, 166MHz, 24-ball TFBGA, RoHS
Datasheet
782In Stock
Min.: 1
Mult.: 1

HyperRAM 64 Mbit 8 bit 166 MHz TFBGA-24 8 M x 8 36 ns 2.7 V 3.6 V - 40 C + 85 C
ISSI DRAM 64Mb, QUADRAM, 1.65V-1.95V, 200MHz, 24-ball TFBGA, RoHS 450In Stock
Min.: 1
Mult.: 1

SDRAM 64 Mbit 200 MHz TFBGA-24 1.65 V 1.95 V
ISSI DRAM 64Mb, OctalRAM, 8Mbx8, 3.0V, 166MHz, 24-ball TFBGA, RoHS
Datasheet
1’775In Stock
Min.: 1
Mult.: 1

PSRAM (Pseudo SRAM) 64 Mbit 8 bit 166 MHz TFBGA-24 8 M x 8 7 ns 2.7 V 3.6 V - 40 C + 85 C
ISSI DRAM 64Mb, SerialRAM, Continuous Operation, 2.7V-3.6V, 104MHz, 8 pin SOIC 150 mil, RoHS
Datasheet
902In Stock
800Expected 9/2/2026
Min.: 1
Mult.: 1

PSRAM (Pseudo SRAM) 64 Mbit 8 bit 104 MHz SOIC-8 8 M x 8 7 ns 2.7 V 3.6 V - 40 C + 85 C
ISSI DRAM 32Mb, SerialRAM, Continuous Operation, 2.7V-3.6V, 104MHz, 8 pin SOIC 150 mil, RoHS
Datasheet
135In Stock
Min.: 1
Mult.: 1

PSRAM (Pseudo SRAM) 32 Mbit 8 bit 104 MHz SOIC-8 4 M x 8 7 ns 2.7 V 3.6 V - 40 C + 85 C
ISSI DRAM 64Mb, SerialRAM, Continuous Operation, 1.65V-1.95V, 104MHz, 8 pin SOIC 150 mil, RoHS
Datasheet
134In Stock
Min.: 1
Mult.: 1

PSRAM (Pseudo SRAM) 64 Mbit 8 bit 104 MHz SOIC-8 8 M x 8 7 ns 1.65 V 1.95 V - 40 C + 85 C
ISSI DRAM 64Mb, SerialRAM, SPI and QPI Protocol, 3V, 104MHz, SOIC-8
Datasheet
131In Stock
Min.: 1
Mult.: 1

PSRAM (Pseudo SRAM) 64 Mbit 8 bit 104 MHz SOIC-8 8 M x 8 7 ns 2.7 V 3.6 V - 40 C + 85 C
ISSI DRAM 32Mb, SerialRAM, 1.65V-1.95V, 104MHz, 8 pin SOIC 150 mil, RoHS
Datasheet
200Expected 3/19/2027
Min.: 1
Mult.: 1

PSRAM (Pseudo SRAM) 64 Mbit 8 bit 104 MHz SOIC-8 8 M x 8 7 ns 1.65 V 1.95 V - 40 C + 85 C