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IXYS IXSH65N120L3KHV SiC MOSFET

IXYS IXSH65N120L3KHV SiC MOSFET is a 3rd-generation 1200V SiC MOSFET designed for high-efficiency power conversion and fast-switching applications. This MOSFET offers a continuous drain current of 67A and a low RDS(on) of 35mΩ (typical), enabling reduced conduction losses and improved system efficiency. The IXSH65N120L3KHV MOSFET features high blocking voltage capability, low capacitance, and an ultra-fast intrinsic body diode for superior switching performance. The Kelvin source connection helps minimize switching losses and improve gate-drive control. The IXSH65N120L3KHV SiC MOSFET is well-suited for demanding applications like EV charging infrastructure, motor drives, DC/DC converters, solar inverters, and switch-mode power supplies.

Features

  • 3rd Generation SiC MOSFET Technology with -3.5V/+15V to 18V gate drive voltage
  • High blocking voltage with low on-state resistance
  • High-speed switching with low capacitance
  • 175°C operating junction temperature capability
  • Ultra-fast and robust intrinsic body diode
  • Kelvin source contact
  • 1200V drain-source voltage
  • 67A drain current
  • 35mΩ (typical) drain-source on-state resistance
  • RoHS compliant

Applications

  • Motor drives
  • EV charging infrastructure
  • DC/DC converter
  • Switch-Mode Power Supplies (SMPS)
  • Solar inverters

Dimensions Drawing (TO-247-4L)

Mechanical Drawing - IXYS IXSH65N120L3KHV SiC MOSFET

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Published: 2026-08-19 | Updated: 2026-09-02