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SiC MOSFETs SIC_DISCRETE
- AIMW120R045M1XKSA1
- Infineon Technologies
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1:
CHF 17.31
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736In Stock
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NRND
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Mouser Part No
726-AIMW120R045M1XKS
NRND
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Infineon Technologies
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SiC MOSFETs SIC_DISCRETE
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736In Stock
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CHF 17.31
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CHF 12.88
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CHF 12.77
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Min.: 1
Mult.: 1
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Through Hole
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TO-247-3
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N-Channel
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1 Channel
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1.2 kV
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52 A
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59 mOhms
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- 7 V, + 20 V
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5.7 V
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57 nC
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- 55 C
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+ 175 C
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228 W
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Enhancement
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CoolSiC
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SiC MOSFETs CoolSiC 1700 V SiC Trench MOSFET in TO-263-7 package
- IMBF170R1K0M1XTMA1
- Infineon Technologies
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1:
CHF 4.23
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6’780In Stock
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4’000Expected 1/7/2027
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Mouser Part No
726-IMBF170R1K0M1XTM
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Infineon Technologies
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SiC MOSFETs CoolSiC 1700 V SiC Trench MOSFET in TO-263-7 package
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6’780In Stock
4’000Expected 1/7/2027
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CHF 4.23
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CHF 2.81
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CHF 2.01
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CHF 1.78
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CHF 1.66
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Min.: 1
Mult.: 1
:
1’000
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SMD/SMT
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TO-263-7
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N-Channel
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1 Channel
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1.7 kV
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5.2 A
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1 Ohms
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- 10 V, + 20 V
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4.5 V
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5 nC
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- 55 C
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+ 175 C
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68 W
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Enhancement
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CoolSiC
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SiC MOSFETs CoolSiC 1200V SiC Trench MOSFET in TO247-3 package
- IMW120R140M1HXKSA1
- Infineon Technologies
-
1:
CHF 5.84
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285In Stock
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NRND
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Mouser Part No
726-IMW120R140M1HXKS
NRND
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Infineon Technologies
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SiC MOSFETs CoolSiC 1200V SiC Trench MOSFET in TO247-3 package
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285In Stock
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CHF 5.84
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CHF 3.71
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CHF 3.11
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CHF 2.88
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Min.: 1
Mult.: 1
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Through Hole
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TO-247-3
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N-Channel
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1 Channel
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1.2 kV
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19 A
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182 mOhms
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- 7 V, + 23 V
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3.5 V
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13 nC
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- 55 C
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+ 175 C
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94 W
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Enhancement
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CoolSiC
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SiC MOSFETs SILICON CARBIDE MOSFET
- IMW65R027M1HXKSA1
- Infineon Technologies
-
1:
CHF 11.99
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71In Stock
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960Expected 8/21/2026
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NRND
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Mouser Part No
726-IMW65R027M1HXKSA
NRND
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Infineon Technologies
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SiC MOSFETs SILICON CARBIDE MOSFET
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71In Stock
960Expected 8/21/2026
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CHF 11.99
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CHF 7.54
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CHF 6.80
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Min.: 1
Mult.: 1
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Through Hole
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TO-247-3
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N-Channel
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1 Channel
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650 V
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47 A
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34 mOhms
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- 5 V, + 23 V
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5.7 V
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62 nC
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- 55 C
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+ 150 C
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189 W
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Enhancement
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CoolSiC
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SiC MOSFETs SILICON CARBIDE MOSFET
- IMZA65R048M1HXKSA1
- Infineon Technologies
-
1:
CHF 8.72
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42In Stock
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240Expected 8/24/2026
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NRND
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Mouser Part No
726-IMZA65R048M1HXKS
NRND
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Infineon Technologies
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SiC MOSFETs SILICON CARBIDE MOSFET
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42In Stock
240Expected 8/24/2026
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CHF 8.72
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CHF 5.49
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CHF 4.88
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CHF 4.44
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Min.: 1
Mult.: 1
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Through Hole
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TO-247-4
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N-Channel
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1 Channel
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650 V
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39 A
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64 mOhms
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- 5 V, + 23 V
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5.7 V
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33 nC
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- 55 C
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+ 150 C
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125 W
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Enhancement
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CoolSiC
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SiC MOSFETs CoolSiC 1200V SiC Trench MOSFET in TO247-4 package
- IMZ120R030M1HXKSA1
- Infineon Technologies
-
1:
CHF 12.82
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2’160On Order
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NRND
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Mouser Part No
726-IMZ120R030M1HXKS
NRND
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Infineon Technologies
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SiC MOSFETs CoolSiC 1200V SiC Trench MOSFET in TO247-4 package
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2’160On Order
Factory Lead Time:
52 Weeks
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CHF 12.82
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CHF 8.27
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CHF 7.68
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Min.: 1
Mult.: 1
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Through Hole
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TO-247-4
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N-Channel
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1 Channel
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1.2 kV
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56 A
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40 mOhms
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- 7 V, + 23 V
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5.7 V
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63 nC
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- 55 C
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+ 150 C
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227 W
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Enhancement
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CoolSiC
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SiC MOSFETs SILICON CARBIDE MOSFET
- IMZA65R072M1HXKSA1
- Infineon Technologies
-
1:
CHF 7.21
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Non-Stocked Lead-Time 52 Weeks
-
NRND
|
Mouser Part No
726-IMZA65R072M1HXKS
NRND
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Infineon Technologies
|
SiC MOSFETs SILICON CARBIDE MOSFET
|
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Non-Stocked Lead-Time 52 Weeks
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CHF 7.21
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CHF 4.21
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CHF 3.55
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CHF 3.41
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Min.: 1
Mult.: 1
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Through Hole
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TO-247-4
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N-Channel
|
1 Channel
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650 V
|
28 A
|
94 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
22 nC
|
- 55 C
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+ 150 C
|
96 W
|
Enhancement
|
CoolSiC
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Liechtenstein