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APC-E Silicon Carbide (SiC) Schottky Barrier Diodes

APC-E Silicon Carbide (SiC) Schottky Barrier Diodes are high-performance semiconductors for power applications. The APC-E SiC Schottky Barrier Diodes offer superior power handling due to high voltage and current ratings, enabling high frequency and high-temperature operation, which boosts power density, efficiency, and system compactness. These diodes feature a reduced capacitive charge (QC), which minimizes reverse recovery loss, aiding fast switching. These devices also maintain consistent performance over a broad temperature range, simplifying system design. Merits include low VF, high surge current, or balanced performance, tailored for PFC, solar inverters, onboard chargers, and EV charging.

Features

  • No reverse recovery charge
  • Positive temperature coefficient
  • Temperature-independent performance
  • Purely capacitive switching
  • Operating temperature as high as +175°C
  • High forward surge capability
  • Single or dual diode chips
  • Through-hole or surface-mount options
  • Improves system efficiency compared to Si diodes
  • Capable of switching at a higher frequency
  • Enables high power density
  • Reduces heat dissipation requirements
  • Rugged operation
  • High system reliability
  • TO-220-2, TO-247-2, TO-247-3, and TO-252-2 package options

Applications

  • Solar
    • Central inverters
    • String inverters
    • Micro inverters
  • Industrial
    • Power supplies (PSUs)
    • Uninterruptible power supplies (UPS)
  • Energy storage
  • PSUs for servers and storage
  • Telecom power supplies
  • Electric vehicles
    • Onboard chargers
    • Charging

Specifications

  • 4A to 50A forward current range
  • 28A to 520A forward surge current range
  • 650V, 1.2kV, 1.7kV, and 2kV repetitive reverse voltage options

Application Guides

Veröffentlichungsdatum: 2025-04-18 | Aktualisiert: 2025-05-06