CEL CA3509M4 L-to-S Band Low Noise Amplifier ICs

CEL CA3509M4 L-to-S Band Amplifier ICs offer low noise and high gain in a small flat-lead 4-pin thin-type super mini mold package. The CA3509M4 ICs feature an on-chip bias supply circuit and an on-chip ESD protection diode. The device is ideal for global navigation satellite systems (GNSS), satellite radio antennas, and microwave communications.

Features

  • Low noise figure and high associated gain (NF=0.4dB typical, Ga=17dB typical at Vdd=3.0V, Idd=15mA, f=1.575GHz)
  • On-chip Bias supply circuit
  • On-chip ESD protection diode
  • Si technology
  • Flat-lead 4-pin thin-type super mini mold package

Applications

  • Global Navigation Satellite Systems (GNSS) like GPS, GLONASS, Beidou, and Galileo
  • Satellite radio (SDARS, DMB, etc.) antenna
  • Microwave communication

Specifications

  • 1.575GHz operating frequency
  • 17dB typical power gain
  • 3V typical operating supply
  • 0.4dB typical noise figure
  • 15mA typical operating supply current
  • -40°C to +85°C operating temperature range

Application Circuit

Application Circuit Diagram - CEL CA3509M4 L-to-S Band Low Noise Amplifier ICs

Package Dimensions

Mechanical Drawing - CEL CA3509M4 L-to-S Band Low Noise Amplifier ICs
Veröffentlichungsdatum: 2019-05-09 | Aktualisiert: 2024-04-12