Diotec Semiconductor DI020N06D1 N-Channel Power MOSFETs
Diotec Semiconductor DI020N06D1 N-Channel Power MOSFETs offer a low on-state resistance, a low gate charge (25.3nC), and fast switching times with an Avalanche rating. With a wide -55°C to +175°C operating temperature range, these components offer a 60V drain-source breakdown voltage, 20A continuous drain current, and a 24mΩ on drain-source resistance. The TO-252AA packaged DI006H03SQ MOSFETs are for DC/DC converters, power supplies, DC drives, synchronous rectifiers, and commercial/industrial-grade applications.
Features
- Advanced Trench technology
- Low on-state resistance
- Fast switching times
- Low gate charge
- Avalanche rated
- UL 94V-0 case material
- TO-252AA D-PAK package
- Moisture Sensitivity Level (MSL) 1
- AEC-Q101 compliant (-Q suffix)
- Lead-free, RoHS and REACH compliant
Applications
- DC/DC converters
- Power supplies
- DC drives
- Synchronous rectifiers
- Commercial/Industrial-grade
Specifications
- 60V drain-source breakdown voltage
- 20A continuous drain current at +25°C
- 24mΩ on drain-source resistance
- ±20V gate-source voltage
- 1.6V gate-source threshold voltage
- 50A (-AQ suffix) or 60A peak drain current
- 25.3nC gate charge
- 25W (-AQ suffix) or 45W power dissipation
- 6ns turn-on delay/rise time
- -55°C to +175°C operating temperature range
Additional Resources
Related MOSFETs
Diotec Semiconductor Advanced Trench Technology Power MOSFETs
Offered as N, P, or dual N+P channel types in single, dual, and H bridge configurations.
Veröffentlichungsdatum: 2023-02-17
| Aktualisiert: 2023-02-24