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GSI Technology Low Latency DRAMs

GSI Technology Low Latency DRAMs are ideal for advanced data networking applications with a low random cycle time and eight-bank memory array architecture. GSI Technology Low Latency DRAMs have double data rate transfers for performance unmatched by commodity DRAM. An SRAM-like address interface makes Low Latency DRAMs easier to use while allowing the devices to maintain near-100% bus utilization for networking tasks.

GSI's LLDRAM devices are ideal for 10GbE, 40GbE and 100GbE packet buffering and inspection tasks. These memory devices are the technology of choice on a variety of Network Processor Units and FPGA Architectures.

Features

  • Pin- and function-compatible with Micron RLDRAM® II
  • 533MHz DDR operation (1.067Gb/s/pin data rate)
  • 38.4Gb/s peak bandwidth (x36 at 533MHz clock frequency)
  • 8M x 36 organization available
  • 8 internal banks for concurrent operation and maximum bandwidth
  • Reduced cycle time (15ns at 533MHz)
  • Address Multiplexing (Non-multiplexed address option available)
  • SRAM-type interface
  • Programmable Read Latency (RL), row cycle time, and burst sequence length
  • Balanced Read and Write Latencies to optimize data bus utilization
  • Data mask for Write commands
  • Differential input clocks (CK, CK)
  • Differential input data clocks (DKx, DKx)
  • On-chip DLL generates CK edge-aligned data and output data clock signals
  • Data valid signal (QVLD)
  • 32ms refresh (8K refresh for each bank, 64K refresh command must be issued in total each 32ms)
  • 144-ball FBGA package
  • HSTL I/O (1.5 V or 1.8 V nominal)
  • 25Ω–60Ω matched impedance outputs
  • 2.5V VEXT, 1.8 V VDD, 1.5V or 1.8V VDDQ I/O
  • On-die termination (ODT) RTT
  • 0°C to +95°C commercial temperature range 
  • –40°C to +95°C industrial temperature range
Veröffentlichungsdatum: 2019-07-02 | Aktualisiert: 2023-04-03