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iDEAL Semiconductor iS20M028S1P SuperQ™ 200V N-Channel Power MOSFET

iDEAL Semiconductor iS20M028S1P SuperQ™ 200V N-Channel Power MOSFET is engineered for SMPS and high-efficiency motor drives. The iDEAL Semiconductor iS20M028S1P MOSFET delivers ultra-low conduction and switching losses in a robust TO-220 package. Featuring best-in-class RDS(on), QSW, and EOSS, this MOSFET minimizes heat dissipation at both full and partial loads. Applications include motor control, boost converters, SMPS control FETs, and secondary side synchronous rectifiers.

Features

  • Wide SOA and current capability
  • Robustness under fault conditions
  • 100% UIS tested in production
  • Low switching losses, QSW, and EOSS
  • Easier parallelling with +0.5V gate threshold
  • TO-220 package
  • Lead-free, Halogen-free, and RoHS-compliant

Applications

  • Motor control
  • Boost converters and SMPS control FETs
  • Secondary side synchronous rectifiers

Specifications

  • Static
    • 200V minimum drain-to-source voltage
    • Maximum drain-to-source leakage current
      • 1μA at +25°C
      • 100μA at +125°C
    • 100nA maximum gate-to-source leakage current
    • 3.1V to 4.1V gate-to-source threshold voltage
    • 25mΩ maximum drain-to-source on-resistance
    • 31S typical transconductance
  • Dynamic
    • 2425pF maximum input capacitance
    • 16pF maximum reverse transfer capacitance
    • 86pF maximum output capacitance
    • 197pF typical effective output capacitance
    • 6.8Ω maximum series gate resistance
    • 8.5ns typical turn-on delay time
    • 1.9ns typical rise time
    • 24.7ns typical turn-off delay time
    • 11.3ns typical fall time
  • Gate charge
    • 34nC maximum gate charge total
    • 2.7nC typical switching charge
    • 1.8nC maximum gate-to-drain charge
    • 5.7V typical gate plateau voltage
    • 108nC maximum output charge
    • 1μJ typical capacitive stored energy
  • Diode
    • 1.2V maximum diode forward voltage
    • 425nC typical reverse recovery charge
    • 107ns typical reverse recovery time
  • ±20V maximum gate-to-source voltage
  • Maximum continuous drain currents
    • 40A at +25°C
    • 28A at +100°C
  • 154A maximum pulsed drain current
  • 100W maximum power dissipation at +25°C
  • 159mJ maximum avalanche energy, single-pulse
  • -55°C to +175°C operating junction temperature range
  • Maximum thermal resistance
    • 1.5°C/W junction-to-case, TO-220
    • 40°C/W junction-to-ambient
    • 62°C/W junction-to-ambient, minimal footprint

Schematic

Schematic - iDEAL Semiconductor iS20M028S1P SuperQ™ 200V N-Channel Power MOSFET

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Veröffentlichungsdatum: 2026-03-23 | Aktualisiert: 2026-03-30