Infineon Technologies KIT_HB_GaN Half-bridge Daughterboards

Infineon Technologies KIT_HB_GaN Half-bridge Daughterboards integrate different gate drive solutions for CoolGaN™ Transistors 650 V G5. These daughterboards enable driving CoolGaN™ transistors with unipolar or bipolar gate-to-source voltages, ensuring compatibility with Gate Injection Transistor (GIT) products. The KIT_HB_GaN daughterboards are an easy plug-in solution for designs with isolated single-channel or dual-channel gate driver ICs. These daughterboards are configured with jumper wires without layout concerns. The KIT_HB_GaN daughterboards incorporate a range of gate driver IC options, including the isolated single-channel EiceDRIVER™ 1EDB7275F, the non-isolated EiceDRIVER™ 1EDN7511B. These daughterboards also include a dual-channel isolated gate driver IC with floating outputs (EiceDRIVER™ 2EDB7259Y).

Features

Isolated single-channel gate driver IC (EiceDRIVER™ 1EDB7275F) and a configurable isolated bias supply enabled by a simple single-channel non-isolated gate driver IC (EiceDRIVER™ 1EDN7511B)
Dual-channel isolated gate driver IC with floating outputs (EiceDRIVER™ 2EDB7259Y)

Compatible with Gate Injection Transistor (GIT) products
Easy plug-in solution for designs with isolated single-channel or dual-channel gate driver ICs
configured with jumper wires without layout concerns