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Nisshinbo NT9003HDAE4S 1mW Class Rectifier Diodes

Nisshinbo NT9003HDAE4S 1mW Class Rectifier Diodes are optimized for rectifier circuits in microwave WPT operating at 920MHz, 2.4GHz, and 5.7GHz bands. These diodes feature 0.1V typical @ IF =4µA low forward voltage, and 20V high-reverse voltage, enabling a wide dynamic range and high-efficiency in WPT rectifier circuits. The NT9003HDAE4S diodes enable a compact mounting area with the small DFN package of 1.2mm x 1.2mm x 0.427mm. These diodes are RoHS-compliant and halogen-free. The NT9003HDAE4S diodes are ideal for detectors and rectifier circuits for microwave wireless power transfer systems.

Features

  • 20V high-reverse voltage
  • 920MHz/2400MHz/5700MHz frequency ranges
  • 0.1V typical at IF =4µA low forward voltage
  • 1µA typical at VR =2V low reverse leakage current
  • 55Ω typical at VF =0.85±0.01V low series resistance
  • 0.03pF typical at VR =2V, f =100MHz low total capacitance
  • 20mA forward current
  • 1.2mm x 1.2mm typical t = 0.427mm maximum
  • +150°C junction temperature
  • -55°C to +150°C storage temperature range
  • -40°C to +85°C operating temperature range
  • RoHS compliant
  • Halogen-free and MSL1

Applications

  • Rectifier circuits for microwave wireless power transfer systems
  • Detectors

Block Diagram

Block Diagram - Nisshinbo NT9003HDAE4S 1mW Class Rectifier Diodes

Typical Characteristics Curve

Performance Graph - Nisshinbo NT9003HDAE4S 1mW Class Rectifier Diodes

Dimensions

Mechanical Drawing - Nisshinbo NT9003HDAE4S 1mW Class Rectifier Diodes
Veröffentlichungsdatum: 2026-06-24 | Aktualisiert: 2026-07-01