PANJIT PJQx43 30V P-Channel Enhancement Mode MOSFETs
PANJIT PJQx43 30V P-Channel Enhancement Mode MOSFETs are reliable and rugged MOSFETs with ±25V gate-source voltage and -55°C to 150°C operating temperature range. These MOSFETs are 100% UIS tested and are available in the DFN5060X-8L and DFN3333-8L packages. The PJQx43 P-Channel MOSFETs are lead-free in compliance with EU RoHS 2.0 and are green molding compounds as per IEC 61249 standard.
Features
- Reliable and rugged
- 100% UIS tested
- -30V drain-source voltage
- ±25V gate-source voltage
- -55°C to 150°C operating junction temperature range
- Lead-free in compliance with EU RoHS 2.0
- Green molding compound as per IEC 61249 standard
- Available DFN5060X-8L and DFN3333-8L packages
View Results ( 8 ) Page
| Teilnummer | Datenblatt | Vds - Drain-Source-Durchschlagspannung | Id - Drain-Gleichstrom | Rds On - Drain-Source-Widerstand | Vgs - Gate-Source-Spannung | Vgs th - Gate-Source-Schwellspannung | Qg - Gate-Ladung | Pd - Verlustleistung | Anstiegszeit | Abfallzeit |
|---|---|---|---|---|---|---|---|---|---|---|
| PJQ5439E_R2_00201 |  |
30 V | 30 A | 18.8 mOhms | - 25 V, 25 V | 2.5 V | 22 nC | 28 W | 3 ns | 40 ns |
| PJQ4433EP_R2_00201 | |
30 V | 62 A | 8.8 mOhms | - 25 V, 25 V | 2.5 V | 54 nC | 54.3 W | 9 ns | 21 ns |
| PJQ4435EP_R2_00201 | |
30 V | 41 A | 12.5 mOhms | - 25 V, 25 V | 2.5 V | 34 nC | 33.8 W | 4 ns | 66 ns |
| PJQ4437EP_R2_00201 | |
30 V | 38 A | 15.4 mOhms | - 25 V, 25 V | 2.5 V | 32 nC | 2.1 W | 9 ns | 39 ns |
| PJQ4439EP_R2_00201 | |
30 V | 30 A | - 25 V, 25 V | 2.5 V | 22 nC | 2.1 W | 3 ns | 40 ns | |
| PJQ5433E_R2_00201 | |
30 V | 68 A | 8.4 mOhms | - 25 V, 25 V | 2.5 V | 54 nC | 62.5 W | 9 ns | 21 ns |
| PJQ5435E_R2_00201 | |
30 V | 43 A | 12.1 mOhms | - 25 V, 25 V | 2.5 V | 34 nC | 36 W | 4 ns | 66 ns |
| PJQ5437E_R2_00201 | |
30 V | 38 A | 15 mOhms | - 25 V, 25 V | 2.5 V | 32 nC | 35 W | 9 ns | 39 ns |
Veröffentlichungsdatum: 2024-06-05
| Aktualisiert: 2024-07-22