Taiwan Semiconductor BAT Schottky Barrier Diodes

Taiwan Semiconductor BAT Schottky Barrier Diodes are designed with high-speed switching capabilities. These diodes offer low forward voltage, 200mA forward current, and high efficiency. The BAT Schottky barrier diodes comply with RoHS and Moisture Sensitivity Level 1 (MSL 1) as per J-STD-020 standards. These diodes are used in reverse polarity protection, voltage clamping, high-speed switching, inverters, adapters, and line termination applications.

Features

  • Fast switching speed
  • Low forward voltage
  • High efficiency
  • 200mA forward current
  • Moisture Sensitivity Level 1 (MSL 1) as per J-STD-020 standards
  • RoHS compliant
  • Molding compound meets UL 94V-0 flammability rating

Applications

  • Reverse polarity protection
  • Voltage clamping
  • High-speed switching
  • Inverters
  • Adapters
  • Line termination
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Teilnummer Datenblatt If - Durchlassstrom Vrrm - Periodische Sperrspannung Vf - Durchlassspannung Ifsm - Durchlass-Stoßstrom Ir - Sperrstrom Pd - Verlustleistung Vr - Sperrspannung Minimale Betriebstemperatur Maximale Betriebstemperatur
BAT54BR-G RFG BAT54BR-G RFG Datenblatt
BAT42WSH RRG BAT42WSH RRG Datenblatt 200 mA 30 V 1 V 4 A 500 nA 200 mW - 55 C + 125 C
BAT54CH RFG BAT54CH RFG Datenblatt 200 mA 30 V 800 mV 600 mA 2 uA 200 mW - 55 C + 125 C
BAT54CWH RFG BAT54CWH RFG Datenblatt 200 mA 30 V 800 mV 600 mA 2 uA 200 mW - 55 C + 125 C
BAT54SH RFG BAT54SH RFG Datenblatt 200 mA 30 V 800 mV 600 mA 2 uA 200 mW - 55 C + 125 C
BAT54SWH RFG BAT54SWH RFG Datenblatt 200 mA 30 V 800 mV 600 mA 2 uA 200 mW - 55 C + 125 C
BAT54WH RFG BAT54WH RFG Datenblatt 200 mA 30 V 800 mV 600 mA 2 uA 200 mW - 55 C + 125 C
BAT43W RHG BAT43W RHG Datenblatt 200 mA 30 V 1 V 4 A 500 nA 200 mW 30 V - 55 C + 125 C
BAT54A RFG BAT54A RFG Datenblatt 200 mA 30 V 1 V 600 mA 2 uA - 55 C + 125 C
BAT54 RFG BAT54 RFG Datenblatt 200 mA 30 V 1 V 600 mA 2 uA - 55 C + 125 C
Veröffentlichungsdatum: 2025-03-13 | Aktualisiert: 2025-06-02