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Texas Instruments 2N7002L 6V N-channel MOSFETs

Texas Instruments 2N7002L 6V N-channel MOSFETs are designed to minimize the on-state resistance while maintaining fast switching performance. These MOSFETs are field-effect transistors in a plastic package with a low gate threshold voltage and low input capacitance. The 2N7002L N-channel MOSFETs feature a 6V drain-to-source voltage, 7V gate-to-source voltage, 1.4A source current, and 1.43A pulsed drain current (tp =1s). These MOSFETs operate over a -65°C to 150°C temperature range and include a 260°C lead temperature for soldering. Typical applications include personal electronics, building automation, and industrial automation.

Features

  • Low on-resistance
  • Low gate threshold voltage
  • Low input capacitance
  • Fast switching speed
  • 2kV gate-source ESD rating

Applications

  • Personal electronics
  • Building automation
  • Industrial automation

Specifications

  • 6V drain to source voltage
  • 7V gate-to-source voltage
  • Drain current:
    • 1.4A at TA=25°C
    • 437mA at TA=85°C
  • 1.4A source current
  • 1.43A pulsed drain current (tp =1s)
  • 260°C lead temperature for soldering purposes
  • -65°C to 150°C operating junction and storage temperature range

Simplified Block Diagram

Block Diagram - Texas Instruments 2N7002L 6V N-channel MOSFETs

Typical Application using 2N7002L

Application Circuit Diagram - Texas Instruments 2N7002L 6V N-channel MOSFETs
Veröffentlichungsdatum: 2026-05-12 | Aktualisiert: 2026-05-12