BSH205G2 20V P-Channel Trench MOSFET

Nexperia BSH205G2 20V P-Channel Trench MOSFET is an enhancement mode field-effect transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. The device employs Trench MOSFET technology and offers a low threshold voltage with very fast switching. The BSH205G2 MOSFET is ideal for applications like relay drivers, high-speed line drivers and switching circuits.

Results: 3
Select Image Part # Mfr. Description Datasheet Availability Pricing (CHF) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Technology Mounting Style Package/Case Transistor Polarity Number of Channels Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum Operating Temperature Maximum Operating Temperature Pd - Power Dissipation Channel Mode Packaging
Nexperia MOSFETs BSH205G2A/SOT23/TO-236AB 157’848In Stock
Cut Tape
CHF 0.33
CHF 0.148
CHF 0.129
CHF 0.095
Reel
CHF 0.071
Min.: 1
Mult.: 1
: 3’000
Si SMD/SMT SOT-23-3 P-Channel 1 Channel 20 V 2.6 A 118 mOhms 8 V 900 mV 4.6 nC - 55 C + 175 C 1.3 W Enhancement Reel, Cut Tape, MouseReel
Nexperia MOSFETs BSH205G2/SOT23/TO-236AB
34’579On Order
Cut Tape
CHF 0.467
CHF 0.319
CHF 0.202
CHF 0.141
CHF 0.128
Reel
CHF 0.098
Min.: 1
Mult.: 1
: 3’000
Si SMD/SMT SOT-23-3 P-Channel 1 Channel 20 V 2.3 A 170 mOhms 8 V 450 mV 6.5 nC - 55 C + 150 C 890 mW Enhancement Reel, Cut Tape, MouseReel
Nexperia MOSFETs BSH205G2/SOT23/TO-236AB
19’999Expected 1/22/2027
Cut Tape
CHF 0.467
CHF 0.319
CHF 0.202
CHF 0.127
Reel
CHF 0.074
Min.: 1
Mult.: 1
: 10’000
Si SMD/SMT SOT-23-3 P-Channel 1 Channel 20 V 2.3 A 170 mOhms 8 V 950 mV 6.5 nC - 55 C + 150 C 890 mW Enhancement Reel, Cut Tape, MouseReel