GaAs FET & pHEMT Devices

MicroWave Technology GaAs FET and pHEMT Devices are ultra-linear, high-dynamic range, and low-phase noise devices that include commercial, industrial, military, and space-grade variants. The GaAs process employed by MicroWave Technology is approved for space applications with proven reliability. These devices come with standard and custom device specifications with high-rel and space-rel screening options availability. The GaAs FET and pHEMT devices are RoHS (lead-free) compliant and offer 100% wafer bond pull, die shear, wafer DC burn-in, and bake tests in evaluation per MIL-PRF-38534. These devices are typically suitable for oscillators, narrow-band, wideband applications, space, and military applications.

Ergebnisse: 10
Auswählen Bild Teile-Nr.
 Herst.
Beschreibung Datenblatt Verfügbarkeit Preis (CHF) Ergebnisse in der Tabelle nach dem Einheitspreis bei Ihrer Menge filtern.
Menge RoHS ECAD Model Technologie
Id - Drain-Gleichstrom
Vds - Drain-Source-Durchschlagspannung
Rds On - Drain-Source-Widerstand
Betriebsfrequenz
Verstärkung
Ausgangsleistung
Maximale Betriebstemperatur
Verpackung/Gehäuse
Verpackung

CML Micro MOSFET HF-Transistoren 26 GHz Medium Power Packaged GaAs FET
Datenblatt
100Auf Lager
MouseReel verfügbar
Min.: 1
Mult.: 1
: 100

GaAs 26 mA 173 Ohms 26 GHz 11 dB 20 dBm + 150 C Reel, Cut Tape, MouseReel
CML Micro MOSFET HF-Transistoren Narrow and Broad Band High Efficiency Amplifier, High Power Amplifier, and Oscillator Applications
Datenblatt
90Auf Lager
Min.: 10
Mult.: 10

GaAs 440 mA to 800 mA 8 V 12 GHz 9 dB 32 dBm + 150 C Die Bulk
CML Micro MOSFET HF-Transistoren Narrow and Broad Band High Efficiency Amplifier, High Power Amplifier, and Oscillator Applications
Datenblatt
100Auf Lager
Min.: 10
Mult.: 10

GaAs 250 mA to 300 mA 8 V 18 GHz 11 dB 30 dBm + 150 C Die Bulk
CML Micro MOSFET HF-Transistoren Narrow and Broad Band High Efficiency Amplifier and Oscillator Applications
Datenblatt
100Auf Lager
Min.: 10
Mult.: 10

GaAs 180 mA to 220 mA 7.5 V 26 GHz 13 dB 28 dBm + 150 C Die Bulk
CML Micro MOSFET HF-Transistoren Narrow and Broad Band High Efficiency Amplifier and Oscillator Applications
Datenblatt
100Auf Lager
Min.: 10
Mult.: 10

GaAs 150 mA to 190 mA 7.5 V 28 GHz 12 dB 28 dBm + 150 C Die Bulk
CML Micro MOSFET HF-Transistoren Low Noise pHEMT Devices
Datenblatt
100Auf Lager
Min.: 10
Mult.: 10

GaAs 175 mA 4.5 V 26 GHz 8 dB, 11 dB 20 dBm + 150 C Die Bulk
CML Micro MOSFET HF-Transistoren Low Noise pHEMT Devices
Datenblatt
Nicht-auf-Lager-Vorlaufzeit 27 Wochen
Min.: 1’000
Mult.: 10
: 10

GaAs 120 mA 4 V 26 GHz 10 dB, 13 dB 16 dBm + 150 C Die Reel
CML Micro MOSFET HF-Transistoren Narrow and Broad Band High Efficiency Amplifier and Oscillator Applications
Datenblatt
Nicht-auf-Lager-Vorlaufzeit 27 Wochen
Min.: 10
Mult.: 10

GaAs 60 mA to 80 mA 6.5 V 28 GHz 15 dB 23 dBm + 150 C Die Bulk
CML Micro MOSFET HF-Transistoren Narrow and Broad Band Linear Amplifier and Oscillator Applications
Datenblatt
Nicht-auf-Lager-Vorlaufzeit 27 Wochen
Min.: 10
Mult.: 10

GaAs 220 mA 12 GHz 10 dB 26 dBm + 150 C Die Bulk
CML Micro MOSFET HF-Transistoren Narrow and Broad Band Linear Amplifier and Oscillator Applications
Datenblatt
Nicht-auf-Lager-Vorlaufzeit 27 Wochen
Min.: 10
Mult.: 10

GaAs 85 mA 26 GHz 15 dB 21 dBm + 150 C Die Bulk