|
|
SiC-MOSFETs Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an HiP247-4 package
- SCT012W90G3-4AG
- STMicroelectronics
-
1:
CHF 16.81
-
640Auf Lager
-
Neues Produkt
|
Mouser-Teilenr.
511-SCT012W90G3-4AG
Neues Produkt
|
STMicroelectronics
|
SiC-MOSFETs Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an HiP247-4 package
|
|
640Auf Lager
|
|
|
CHF 16.81
|
|
|
CHF 14.33
|
|
|
CHF 12.40
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
HiP247-3
|
N-Channel
|
1 Channel
|
900 V
|
110 A
|
15.8 mOhms
|
- 10 V, + 22 V
|
3.1 V
|
138 nC
|
- 55 C
|
+ 200 C
|
625 W
|
Enhancement
|
AEC-Q101
|
|
|
|
SiC-MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247 package
- SCT025W120G3AG
- STMicroelectronics
-
1:
CHF 14.62
-
502Auf Lager
-
Neues Produkt
|
Mouser-Teilenr.
511-SCT025W120G3AG
Neues Produkt
|
STMicroelectronics
|
SiC-MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247 package
|
|
502Auf Lager
|
|
|
CHF 14.62
|
|
|
CHF 11.71
|
|
|
CHF 10.12
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
HiP247-3
|
N-Channel
|
1 Channel
|
1.2 kV
|
56 A
|
37 mOhms
|
- 10 V, + 22 V
|
3 V
|
73 nC
|
- 55 C
|
+ 200 C
|
388 W
|
Enhancement
|
AEC-Q101
|
|
|
|
SiC-MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 15 mOhm typ., 129 A in an HiP247-4 package
- SCT015W120G3-4AG
- STMicroelectronics
-
1:
CHF 19.63
-
600erwartet ab 27.07.2026
|
Mouser-Teilenr.
511-SCT015W120G3-4AG
|
STMicroelectronics
|
SiC-MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 15 mOhm typ., 129 A in an HiP247-4 package
|
|
600erwartet ab 27.07.2026
|
|
|
CHF 19.63
|
|
|
CHF 16.06
|
|
|
CHF 14.19
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
HiP-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
129 A
|
15 mOhms
|
- 18 V, + 18 V
|
4.2 V
|
167 nC
|
- 55 C
|
+ 200 C
|
673 W
|
Enhancement
|
AEC-Q101
|
|
|
|
SiC-MOSFETs Silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247-4 package
- SCT040W120G3-4
- STMicroelectronics
-
1:
CHF 9.22
-
100Auf Bestellung
-
Neues Produkt
|
Mouser-Teilenr.
511-SCT040W120G3-4
Neues Produkt
|
STMicroelectronics
|
SiC-MOSFETs Silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247-4 package
|
|
100Auf Bestellung
|
|
|
CHF 9.22
|
|
|
CHF 7.51
|
|
|
CHF 6.25
|
|
|
CHF 5.58
|
|
|
CHF 4.74
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
HiP247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
40 A
|
54 mOhms
|
- 10 V, + 22 V
|
3.1 V
|
56 nC
|
- 55 C
|
+ 200 C
|
312 W
|
Enhancement
|
AEC-Q101
|
|
|
|
SiC-MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 19.2 mOhm typ., 90 A in a HiP247-4 package
- SCT019W120G3-4AG
- STMicroelectronics
-
600:
CHF 10.40
-
Nicht-auf-Lager-Vorlaufzeit 17 Wochen
-
Neues Produkt
|
Mouser-Teilenr.
511-SCT019W120G3-4AG
Neues Produkt
|
STMicroelectronics
|
SiC-MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 19.2 mOhm typ., 90 A in a HiP247-4 package
|
|
Nicht-auf-Lager-Vorlaufzeit 17 Wochen
|
|
Min.: 600
Mult.: 600
|
|
|
Through Hole
|
HiP247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
90 A
|
26 mOhms
|
- 10 V, + 22 V
|
4.2 V
|
120 nC
|
- 55 C
|
+ 200 C
|
486 W
|
|
|
|
|
|
SiC-MOSFETs Silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247-4 package
- SCT025W120G3-4
- STMicroelectronics
-
600:
CHF 9.50
-
Nicht-auf-Lager-Vorlaufzeit 17 Wochen
-
Neues Produkt
|
Mouser-Teilenr.
511-SCT025W120G3-4
Neues Produkt
|
STMicroelectronics
|
SiC-MOSFETs Silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247-4 package
|
|
Nicht-auf-Lager-Vorlaufzeit 17 Wochen
|
|
Min.: 600
Mult.: 600
|
|
|
Through Hole
|
HiP247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
56 A
|
37 mOhms
|
-10 V, 22 V
|
4.2 V
|
73 nC
|
- 55 C
|
+ 200 C
|
388 W
|
Enhancement
|
|
|
|
|
SiC-MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HiP247-4 package
- SCT070W120G3-4
- STMicroelectronics
-
1:
CHF 8.85
-
Nicht-auf-Lager-Vorlaufzeit 17 Wochen
-
Neues Produkt
|
Mouser-Teilenr.
511-SCT070W120G3-4
Neues Produkt
|
STMicroelectronics
|
SiC-MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HiP247-4 package
|
|
Nicht-auf-Lager-Vorlaufzeit 17 Wochen
|
|
|
CHF 8.85
|
|
|
CHF 5.29
|
|
|
CHF 4.50
|
|
|
CHF 4.37
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
HiP247-4
|
N-Channel
|
|
1.2 kV
|
30 A
|
87 mOhms
|
- 10 V, + 22 V
|
3 V
|
41 nC
|
- 55 C
|
+ 200 C
|
236 W
|
Enhancement
|
|
|
|
|
SiC-MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A
- SCT070W120G3AG
- STMicroelectronics
-
600:
CHF 5.94
-
Nicht-auf-Lager-Vorlaufzeit 17 Wochen
-
Neues Produkt
|
Mouser-Teilenr.
511-SCT070W120G3AG
Neues Produkt
|
STMicroelectronics
|
SiC-MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A
|
|
Nicht-auf-Lager-Vorlaufzeit 17 Wochen
|
|
|
CHF 5.94
|
|
|
CHF 5.06
|
|
Min.: 600
Mult.: 600
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
SiC-MOSFETs Silicon carbide Power MOSFET 1200 V, 62 mOhm typ., 36 A in an HiP247 package
- SCTWA40N120G2V
- STMicroelectronics
-
1:
CHF 14.61
-
Nicht-auf-Lager-Vorlaufzeit 32 Wochen
-
NRND
|
Mouser-Teilenr.
511-SCTWA40N120G2V
NRND
|
STMicroelectronics
|
SiC-MOSFETs Silicon carbide Power MOSFET 1200 V, 62 mOhm typ., 36 A in an HiP247 package
|
|
Nicht-auf-Lager-Vorlaufzeit 32 Wochen
|
|
|
CHF 14.61
|
|
|
CHF 11.13
|
|
|
CHF 9.35
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
HiP247-3
|
N-Channel
|
1 Channel
|
1.2 kV
|
36 A
|
100 mOhms
|
- 10 V, + 22 V
|
2.45 V
|
61 nC
|
- 55 C
|
+ 200 C
|
278 W
|
Enhancement
|
|
|
Liechtenstein
